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MG400V2YS60A Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor |
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MG400V2YS60A Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor |
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3 / 9 page  MG400V2YS60A 2004-10-01 3/9 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector −emitter voltage VCES 1700 V Gate −emitter voltage VGES ±20 V Collector current DC IC 400 A Forward current DC IF 400 A Collector power dissipation (Tc = 25°C) PC 4300 W Junction temperature Tj 150 °C Storage temperature range Tstg −40~125 °C Isolation voltage VIsol 4000 (AC 1 min) V Terminal: M8 ― 10 N·m Screw torque Mounting: M5 ― 3 N·m Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Gate leakage current IGES VGE = ±20V, VCE = 0V ― ― ±10 µA Collector cut −off current ICES VCE = 1700V, VGE = 0V ― ― 1 mA Gate −emitter cut−off voltage VGE(off) IC = 400mA, VCE = 5V 4.5 5.5 6.5 V Tj = 25°C ― 3.0 3.4 Collector −emitter saturation voltage VCE(sat) IC = 400A VGE = 15V Tj = 125°C ― 3.8 4.2 V Input capacitance Cies VCE = 10V, VGE = 0V, f = 1MHz ― 45000 ― pF Gate −emitter voltage VGE ― 13 15 17 V Gate resistance RG ― 8.2 ― 15 Ω Turn −on delay time td(on) ― 0.35 ― Rise time tr ― 0.2 ― Turn −on time ton ― 0.55 ― Turn −off delay time td(off) ― 0.9 ― Fall time tf ― 0.4 0.6 Switching time Turn −off time toff Inductive load VCC = 900V IC = 400A VGE = ±15V RG = 8.2Ω (Note) ― 1.3 ― µs Tj = 25°C ― 3.2 4.2 Forward voltage VF IF = 400A, VGE = 0V Tj = 125°C ― 2.4 ― V Reverse recovery time trr IF = 400A, VGE = −15V di/dt = 2000A/µs ― 0.20 0.40 µs Transistor stage ― ― 0.029 Thermal resistance Rth(j−c) Diode stage ― ― 0.056 °C / W RTC operating current Irtc Tj = 25°C 800 ― ― A |
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