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M54530P Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor

Part No. M54530P
Description  7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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M54530P Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor

   
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Aug. 1999
PIN CONFIGURATION
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54530P/FP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M54530P and M54530FP are seven-circuit Darlington tran-
sistor arrays with clamping diodes. The circuits are made of
NPN transistors. Both the semiconductor integrated circuits
perform high-current driving with extremely low input-current
supply.
FEATURES
High breakdown voltage (BVCEO
≥ 40V)
High-current driving (Ic(max) = 400mA)
With clamping diodes
Driving available with PMOS IC output
Wide operating temperature range (Ta = –20 to +75
°C)
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps), and MOS-bipolar logic IC inter-
faces
FUNCTION
The M54530P and M54530FP each have seven circuits con-
sisting of NPN Darlington transistors. These ICs have resis-
tance of 20k
Ω between input transistor bases and input pins.
A spike-killer clamping diode is provided between each out-
put pin (collector) and COM pin (pin 9). The output transistor
emitters are all connected to the GND pin (pin 8).
The collector current is 400mA maximum. Collector-emitter
supply voltage is 40V maximum.
The M54530FP is enclosed in a molded small flat package,
enabling space-saving design.
CIRCUIT DIAGRAM
V
mA
V
mA
V
W
°C
°C
–0.5 ~ +40
400
–0.5 ~ +40
400
40
1.47(P)/1.00(FP)
–20 ~ +75
–55 ~ +125
VCEO
IC
VI
IF
VR
Pd
Topr
Tstg
20K
2K
20K
COM
GND
INPUT
OUTPUT
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit :
The seven circuits share the COM and GND.
Ratings
Symbol
Parameter
Conditions
Unit
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75
°C)
Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Output, H
Current per circuit output, L
Ta = 25
°C, when mounted on board
1
IN1
IN2
IN3
IN4
IN5
IN6
IN7
→COM COMMON
GND
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
→O7
→O6
→O5
→O4
→O3
→O2
→O1 
16P4(P)
Package type 16P2N-A(FP)
INPUT
OUTPUT


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