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M54525AGP Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor

Part No. M54525AGP
Description  7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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M54525AGP Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor

   
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Feb.2003
IN7
→ O7
7
10
IN5→
→ O5
5
12
INPUT
OUTPUT
IN4→
→ O4
4
13
IN3
→ O3
3
14
IN2
→ O2
2
15
1
IN1
→ O1
16
GND
9
8
IN6→
→ O6
6
11
COM COMMON
16P2S-A
Package type
PIN CONFIGURATION
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54525AGP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
DESCRIPTION
M54525AGP is seven-circuit Darlington transistor array with
clamping diodes. The circuits are made of NPN transistors.
Both the semiconductor integrated circuits perform high-cur-
rent driving with extremely low input-current supply.
FEATURES
q High breakdown voltage (BVCEO
≥ 50V)
q High-current driving (IC(max) = 500mA )
q With clamping diodes
q Driving available with PMOS IC output of 24V
q Wide operating temperature range (Ta = –40 to +85
°C)
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps), and MOS-bipolar logic IC inter-
faces
FUNCTION
The M54525AGP has seven circuits consisting of NPN
Darlington transistors. This IC has resistance of 10.5k
Ω and
Zener diode between input transistor bases and input pins.
A spike-killer clamping diode is provided between each out-
put pin (collector) and COM pin (pin 9). The output transistor
emitters are all connected to the GND pin (pin 8). The col-
lector current is 500mA maximum. Collector-emitter supply
voltage is 50V maximum. The M54525AGP is enclosed in
molded small flat package, enabling space-saving design.
CIRCUIT DIAGRAM
Unit:
The seven circuits share COM and GND.
The diode, indicated with the dotted line, parasitic, and cannot
be used.
INPUT
OUTPUT
GND
10.5k
3k
5k
COM
Vz=7V
Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
V
mA
V
mA
V
W
°C
°C
–0.5 ~ +50
500
–0.5 ~ +30
500
50
0.80
–40 ~ +85
–55 ~ +125
Ratings
Symbol
Parameter
Conditions
Unit
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85
°C)
Output, H
Current per circuit output, L
Ta = 25
°C, when mounted on board
VCEO
IC
VI
IF
VR
Pd
Topr
Tstg


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