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2SC3807MP Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part No. 2SC3807MP
Description  NPN Epitaxial Planar Silicon Transistor 25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications
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Maker  SANYO [Sanyo Semicon Device]
Homepage  https://www.sanyo-av.com/us/
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2SC3807MP Datasheet(HTML) 2 Page - Sanyo Semicon Device

   
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2SC3807MP
No. A0629-2/4
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=20V, IE=0A
0.1
µA
Emitter Cutoff Current
IEBO
VEB=10V, IC=0A
0.1
µA
DC Current Gain
hFE1VCE=5V, IC=500mA
1000
2000
hFE2VCE=5V, IC=1A
600
Gain-Bandwidth Product
fT
VCE=10V, IC=50mA
260
MHz
Output Capacitance
Cob
VCB=10V, f=1MHz
24
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=1A, IB=20mA
0.135
0.5
V
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=1A, IB=20mA
0.85
1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=10µA, IE=0A
30
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, RBE=∞
25
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=10µA, IC=0A
17
V
Turn-ON Time
ton
See specified Test Circuit.
0.14
µs
Storage Time
tstg
See specified Test Circuit.
0.8
µs
Fall Time
tf
See specified Test Circuit.
0.1
µs
Package Dimensions
Switching Time Test Circuit
unit : mm (typ)
7520-002
VR
RB
VCC=10V
7IB1= --7IB2=IC=700mA
--5V
++
50Ω
RL
INPUT
OUTPUT
100µF
470µF
PW=20µs
IB1
D.C.≤1%
IB2
12 3
0.5
0.5
0.5
0.6
1.45
1.45
6.0
4.7
5.0
1 : Emitter
2 : Collector
3 : Base
SANYO : MP
Collector-to-Emitter Voltage, VCE -- V
IC -- VCE
Base-to-Emitter Voltage, VBE -- V
IC -- VBE
2.0
1.6
1.2
0.4
0.8
1.8
1.4
0.6
1.0
0.2
0
0.4
0
0.8
1.2
1.6
2.0
0.2
0.6
1.0
1.4
1.8
IT11142
1.0mA
2.0mA
IB=0mA
0.5mA
3.0m
A
5.0mA
7.0mA
4.0mA
6.0mA
2.0
1.6
1.2
0.4
0.8
1.8
1.4
0.6
1.0
0.2
0
VCE=5V
0
0.2
0.4
0.6
0.8
1.2
1.0
IT11143


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