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6LN04MH Datasheet(PDF) 1 Page - Sanyo Semicon Device |
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6LN04MH Datasheet(HTML) 1 Page - Sanyo Semicon Device |
1 / 4 page 6LN04MH No. A0458-1/4 Features • 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25 °C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±10 V Drain Current (DC) ID 200 mA Drain Current (Pulse) IDP PW ≤10µs, duty cycle≤1% 800 mA Allowable Power Dissipation PD Mounted on a ceramic board (900mm2!0.8mm) 0.6 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25 °C Ratings Parameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 60 V Zero-Gate Voltage Drain Current IDSS VDS=60V, VGS=0V 1 µA Gate-to-Source Leakage Current IGSS VGS=±8V, VDS=0V ±10 µA Cutoff Voltage VGS(off) VDS=10V, ID=100µA 0.4 1.3 V Forward Transfer Admittance yfs VDS=10V, ID=100mA 280 480 mS RDS(on)1 ID=100mA, VGS=4V 2.2 2.9 Ω Static Drain-to-Source On-State Resistance RDS(on)2 ID=50mA, VGS=2.5V 2.4 3.4 Ω RDS(on)3 ID=10mA, VGS=1.5V 3.5 7.0 Ω Input Capacitance Ciss VDS=20V, f=1MHz 26 pF Output Capacitance Coss VDS=20V, f=1MHz 5.9 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 3.2 pF Turn-ON Delay Time td(on) See specified Test Circuit. 18.5 ns Rise Time tr See specified Test Circuit. 26 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 146 ns Fall Time tf See specified Test Circuit. 69 ns Marking : FA Continued on next page. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Ordering number : ENA0458 71006PE MS IM TB-00002393 Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. SANYO Semiconductors DATA SHEET 6LN04MH N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
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