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HEDS-9100 Datasheet(PDF) 1 Page - AVAGO TECHNOLOGIES LIMITED |
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HEDS-9100 Datasheet(HTML) 1 Page - AVAGO TECHNOLOGIES LIMITED |
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1 / 4 page  Description The following cumulative test results have been obtained from testing performed at Avago Technologies in accord- ance with the latest revision of MIL- STD-883. Avago tests parts at the absolute maximum rated con- ditions recommended for the device. The actual per- formance you obtain from Avago parts depends on the electrical and environmental characteristics of your ap- plication but will probably be better than the perform- ance outlined in Table . Test Name Stress Test Conditions Total Device Hrs. Units Tested Total Failed Point Typical Performance MTBF Failure Rate (% /1K Hours) High Temperature Operating Life V CC = 5.5 V, V A = VB = 3.5 V T A = 00°C 000 hours ,405,000 ,405 2 702,500 0.42 Temperature Humidity Operating Life V CC = 5.5 V V A = VB = 3.5 V ,000 hours T A = 85°C RH = 85% ,495,000 ,495 0 49,500 0.669 Table 1. Life Tests Demonstrated Performance Failure Rate Prediction The failure rate of semiconductor devices is determined by the junction temperature of the device. The relation- ship between ambient temperature and actual junction temperature is given by the following: T J (°C) = TA (°C) + θJA PAVG where T A = ambient temperature in °C θ JA = thermal resistance of junction-to-ambient in °C/watt P AVG = average power dissipated in watts The estimated MTBF and failure rate at temperatures lower than the actual stress temperature can be deter- mined by using an Arrhenius model for temperature ac- celeration. Results of such calculations are shown in the table on the following page using an activation energy of 0.43 eV (reference MIL-HDBK-27). HEDS-5500, HEDS-6500 and HEDS-9000, 9100, 9200 Series Motion Sensing Products, Optical Encoder Modules Reliability Data |
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