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CM100DY-34A Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor |
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CM100DY-34A Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor |
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2 / 5 page  Jun. 2007 2 VCE = VCES, VGE = 0V ±VGE = VGES, VCE = 0V Tj = 25°C Tj = 125°C VCC = 1000V, IC = 100A, VGE = 15V VCC = 1000V, IC = 100A VGE1 = VGE2 = 15V RG = 4.8Ω, Inductive load switching operation IE = 100A IE = 100A, VGE = 0V IGBT part (1/2 module)*1 FWDi part (1/2 module)*1 Case to fin, Thermal compound applied (1/2 module)*1,*2 Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector to emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Contact thermal resistance External gate resistance IC = 10mA, VCE = 10V IC = 100A, VGE = 15V VCE = 10V VGE = 0V 1700 ±20 100 200 100 200 960 –40 ~ +150 –40 ~ +125 3500 2.5 ~ 3.5 3.5 ~ 4.5 310 MITSUBISHI IGBT MODULES CM100DY-34A HIGH POWER SWITCHING USE V V A A W °C °C V N • m g 1 2.0 2.8 — 24.7 2.8 0.53 — 200 150 550 350 300 — 3.0 0.13 0.21 — 48 mA µA nF nC ns µC V °C/W Ω — — 2.2 2.45 — — — 670 — — — — — 10 — — — 0.022 — — — — — — — — — — — — — — — — — — — 4.8 7.0 V V 5.5 8.5 ICES IGES Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG Symbol Parameter VGE(th) VCE(sat) *1 : Tc, Tf measured point is just under the chips. *2 : Typical value is measured by using Shin-Etsu Chemical Co.,Ltd “G-746”. Note 1. IE, IEM, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Weight G-E Short C-E Short DC, TC = 108°C*1 (Note 2) Pulse (Note 2) Operation (Note 2) Pulse (Note 2) TC = 25°C*1 Main terminal to base plate, AC 1 min. Main terminal M5 Mounting holes M6 Typical value Symbol Parameter Collector current Emitter current Torque strength Conditions Unit Ratings VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — — Unit Typ. Limits Min. Max. Test conditions ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) ABSOLUTE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) Thermal resistance |
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Similar Description - CM100DY-34A |
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