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CM100TL-24NF Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor |
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CM100TL-24NF Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor |
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2 / 5 page  Jun. 2004 IC = 10mA, VCE = 10V IC = 100A, VGE = 15V VCE = 10V VGE = 0V VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V VCC = 600V, IC = 100A, VGE = 15V VCC = 600V, IC = 100A VGE1 = VGE2 = 15V RG = 3.1 Ω, Inductive load switching operation IE = 100A IE = 100A, VGE = 0V IGBT part (1/6 module)*1 FWDi part (1/6 module)*1 Case to fin, Thermal compound Applied (1/6 module)*2 1200 ±20 100 200 100 200 620 –40 ~ +150 –40 ~ +125 2500 2.5 ~ 3.5 2.5 ~ 3.5 350 MITSUBISHI IGBT MODULES CM100TL-24NF HIGH POWER SWITCHING USE V V A A A A W °C °C V N • m N • m g 1 0.5 3.0 — 17.5 1.5 0.34 — 100 70 300 350 150 — 3.8 0.20 0.28 — 42 mA µA nF nF nF nC ns ns ns ns µC V °C/W °C/W °C/W Ω — — 2.1 2.4 — — — 500 — — — — — 4.8 — — — 0.085 — — — — — — — — — — — — — — — — — — — 3.1 7V V 68 ns Collector cutoff current Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Contact thermal resistance External gate resistance Gate-emitter threshold voltage Collector-emitter saturation voltage Thermal resistance ICES IGES Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG Symbol Parameter VGE(th) VCE(sat) *1 : Tc measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150 °C. 4. Pulse width and repetition rate should be such as to cause neglible temperature rise. Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Weight G-E Short C-E Short DC, TC = 80 °C*1 Pulse (Note 2) Pulse (Note 2) TC = 25 °C Main Terminal to base plate, AC 1 min. Main Terminal M5 Mounting holes M5 Typical value Symbol Parameter Collector current Emitter current Torque strength Conditions Unit Ratings VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — — Unit Typ. Limits Min. Max. ABSOLUTE MAXIMUM RATINGS (Tj = 25 °C) ELECTRICAL CHARACTERISTICS (Tj = 25 °C) Test conditions Tj = 25 °C Tj = 125 °C |
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