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CM50TU-34KA Datasheet(PDF) 4 Page - Mitsubishi Electric Semiconductor

Part No. CM50TU-34KA
Description  IGBT MODULES HIGH POWER SWITCHING USE
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

CM50TU-34KA Datasheet(HTML) 4 Page - Mitsubishi Electric Semiconductor

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Sep. 2001
MITSUBISHI IGBT MODULES
CM50TU-34KA
HIGH POWER SWITCHING USE
100
101
57
102
23
5
7
101
2
3
5
7
102
2
3
5
7
103
2
3
5
7
104
2
3
5
7
100
23
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT IC (A)
Conditions:
VCC = 1000V
VGE =
±15V
RG = 6.3
Tj = 125
°C
Inductive load
tr
td(off)
td(on)
tf
100
101
23
5
7
102
23
5
7
101
102
2
3
5
7
103
2
3
5
7
trr
Irr
Conditions:
VCC = 1000V
VGE =
±15V
RG = 6.3
Tj = 25
°C
Inductive load
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
EMITTER CURRENT IE (A)
101
10–3
10–5
10–4
100
7
5
3
2
10–2
7
5
3
2
10–1
7
5
3
2
7
5
3
2
10–323 5 7
23 5 7
23 5 7
23 5 7
101
10–2
10–1
100
10–3
10–3
7
5
3
2
10–2
7
5
3
2
10–1
3
2
23 5 7
23 5 7
Single Pulse
TC = 25
°C
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
TMIE (s)
IGBT part:
Per unit base = Rth(j–c) = 0.21
°C/W
FWDi part:
Per unit base = Rth(j–c) = 0.47
°C/W
0
4
8
16
12
20
0
50
150
300
100
250
200
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
GATE CHARGE QG (nC)
VCC = 800V
VCC = 1000V
IC = 50A


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