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CM50TU-34KA Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor

Part No. CM50TU-34KA
Description  IGBT MODULES HIGH POWER SWITCHING USE
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

CM50TU-34KA Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor

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Sep. 2001
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Thermal resistance*1
Collector cutoff current
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Contact thermal resistance
Thermal resistance
ICES
IGES
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (Note 1)
Qrr (Note 1)
VEC(Note 1)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Rth(j-c’)Q
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
Tj = 25
°C
Tj = 125
°C
VCC = 1000V, IC = 50A, VGE = 15V
VCC = 1000V, IC = 50A
VGE1 = VGE2 = 15V
RG = 6.3
Ω, Inductive load switching operation
IE = 50A
IE = 50A, VGE = 0V, Tj = 25
°C
IE = 50A, VGE = 0V, Tj = 125
°C
IGBT part (1/6 module)
FWDi part (1/6 module)
Case to fin, Thermal compound applied*2 (1/6 module)
Tc measured point is just under the chips
IC = 5mA, VCE = 10V
IC = 50A, VGE = 15V
VCE = 10V
VGE = 0V
1700
±20
50
100
50
100
600
–40 ~ +150
–40 ~ +125
3500
2.5 ~ 3.5
2.5 ~ 3.5
680
MITSUBISHI IGBT MODULES
CM50TU-34KA
HIGH POWER SWITCHING USE
V
V
W
°C
°C
V
N • m
N • m
g
A
A
1
0.5
4.0
7.0
1.2
0.38
100
100
400
800
200
4.6
0.21
0.47
0.17*3
mA
µA
nF
nC
µC
V
V
°C/W
3.2
3.8
225
3.9
2.2
0.09
5.5
V
V
ns
47
ns
Symbol
Parameter
VGE(th)
VCE(sat)
Note 1. IE, VEC, trr, Qrr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150
°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
*1 : Tc measured point is indicated in OUTLINE DRAWING.
*2 : Typical value is measured by using Shin-etsu Silicone “G-746”.
*3 : If you use this value, Rth(f-a) should be measured just under the chips.
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Weight
G-E Short
C-E Short
TC = 25
°C
Pulse
(Note 2)
TC = 25
°C
Pulse
(Note 2)
TC = 25
°C
Main terminal to base plate, AC 1 min.
Main Terminal M5
Mounting holes M5
Typical value
Symbol
Parameter
Collector current
Emitter current
Torque strength
Conditions
Unit
Ratings
VCES
VGES
IC
ICM
IE (Note 1)
IEM (Note 1)
PC (Note 3)
Tj
Tstg
Viso
Unit
Typ.
Limits
Min.
Max.
MAXIMUM RATINGS (Tj = 25
°C)
ELECTRICAL CHARACTERISTICS (Tj = 25
°C)
Test conditions


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