MITSUBISHI RF POWER MODULE

RoHS COMPLIANT

RA02M8087MD

RA02M8087MD

MITSUBISHI ELECTRIC

31 Jan 2007

2/7

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

SYMBOL PARAMETER

CONDITIONS

RATING

UNIT

Drain Voltage

9.2

V

Gate Voltage

4

V

Gate Voltage

4

V

Input Power

100

mW

Output Power

f=806-869MHz,

5

W

Operation Case Temperature Range

-30 to +90

°C

Storage Temperature Range

-40 to +110

°C

The above parameters are independently guaranteed.

SYMBOL PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

f

Frequency Range

806

869

MHz

Output Power

Idq1=20mA(Vgg1 adjust.),

Idq2=300mA(Vgg2 adjust.)

34

dBm

η

T

Total Efficiency

30

%

2

-30

dBc

ρ

in

Input VSWR

5.8:1

—

Gate Current

Idq1=20mA(Vgg1 adjust.),

Idq2=300mA(Vgg2 adjust.)

1

mA

IMD3

3

Distortion

-26

dBc

IMD5

5

Distortion

Idq1=20mA(Vgg1 adjust.),

Idq2=300mA(Vgg2 adjust.) ,

Two tone test at 1KHz separation

-30

dBc

GV

Gain Variation

Across specified frequency range

Idq1=20mA(Vgg1 adjust.),

Idq2=300mA(Vgg2 adjust.)

0

4

dB

—

Stability

Vdd=6.0/7.2/9.2V,

Idq1=20mA(Vgg1 adjust),

Idq2=300mA(Vgg2 adjust) ,

Po(Single Carrier)=15-34dBm(Pin control)

LOAD VSWR=2:1(All Phase),Zg=50

Ω

No parasitic oscillation

—

—

Load VSWR Tolerance

LOAD VSWR=2:1(All Phase),Zg=50Ω,

Idq1=20mA(Vgg1 adjust.@Vdd=7.2V),

Idq2=300mA(Vgg2 adjust.@Vdd=7.2V)

No degradation or destroy

—

All parameters, conditions, ratings, and limits are subject to change without notice.