ABB Semiconductors AG reserves the right to change specifications without notice.

=

4200 V

=

4275 A

=

6715 A

=

60000 A

=

0.95 V

=

0.130 m

Ω

Doc. No. 5SYA1051-01 Sep.00

• Patented free-floating silicon technology

• Low on-state and switching losses

• Designed for traction, energy and industrial applications

• Optimum power handling capability

• Interdigitated amplifying gate.

Blocking

Part Number

5STP 38Q4200

5STP 38Q4000

5STP 38Q3600

Conditions

4200 V

4000 V

3600 V

4600 V

4400 V

4000 V

≤ 400 mA

≤ 400 mA

2000 V/µs

Mechanical data

Mounting force

nom.

90

kN

min.

81

kN

max.

108

kN

a

Acceleration

Device unclamped

Device clamped

50

100

m/s

2

m/s

2

m

Weight

2.1

kg

Surface creepage distance

36

mm

Air strike distance

15

mm

Phase Control Thyristor

5STP 38Q4200