PY264-55WMB datasheet(2/8 Pages) PYRAMID

Part #	PY264-55WMB

Description	8K X 8 REPROGRAMMABLE PROM

Download	8 Pages

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Manufacturer	PYRAMID [Pyramid Semiconductor Corporation]

Direct Link	http://www.pyramidsemiconductor.com

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2 / 8 page

PY264

Page 2 of 8

Document # EPROM102 REV OR

MAXIMUM RATINGS(1)

Symbol

Parameter

Value

Unit

V

CC

Power Supply Pin with

–0.5 to +7

V

Respect to GND

Terminal Voltage with

–0.5 to

V

TERM

Respect to GND

V

CC +0.5

V

(up to 7.0V)

V

PP

Program Voltage

13

V

Symbol

Parameter

Value

Unit

T

A

Operating Temperature

–55 to +125

°C

T

BIAS

Temperature Under

–55 to +125

°C

Bias

T

STG

Storage Temperature

–65 to +150

°C

P

T

Power Dissipation

1.0

W

I

OUT

DC Output Current

50

mA

Symbol

Parameter

Conditions Typ. Unit

C

IN

Input Capacitance

V

IN = 0V

10

pF

C

OUT

Output Capacitance V

OUT= 0V

10

pF

Grade(2)

Ambient Temp

Gnd

Vcc

Commercial

0°C to 70°C

0V

5.0V ±10%

Military

-55°C to +125°C

0V

5.0V ±10%

RECOMMENDED OPERATING CONDITIONS

CAPACITANCES(4)

(V

CC = 5.0V, TA = 25°C, f = 1.0MHz)

DC ELECTRICAL CHARACTERISTICS

Over recommended operating temperature and supply voltage(2)

V

PP

Programming Supply Voltage

12

13

50

V

mA

Programming Supply Current

I

PP

Symbol

V

IH

V

IL

V

HC

V

LC

V

OL

V

OH

I

LI

I

LO

Parameter

Input High Voltage

Input Low Voltage

CMOS Input High Voltage

CMOS Input Low Voltage

Output Low Voltage (TTL Load)

Output High Voltage (TTL Load)

Input Leakage Current

Output Leakage Current

Test Conditions

I

OL = +16 mA, VCC = Min.

I

OH = –4 mA, VCC = Min.

V

CC = Max.

V

IN = GND to VCC

V

CC = Max., CE = VIH,

V

OUT = GND to VCC

PY264

Min

2.0

–0.5(3)

V

CC –0.2

–0.5(3)

2.4

–10

Max

V

CC

0.8

V

CC +0.5

0.2

0.4

+10

Unit

V

µA

I

CC

Symbol

Parameter

Temperature Range

Dynamic Operating Current*

Commercial

Military

–35

–55

Unit

mA

POWER DISSIPATION CHARACTERISTICS VS. SPEED

120

100

–45

V

IHP

Input HIGH Programming Voltage

4.75

V

ILP

Input LOW Programming Voltage

0.4

V

COM

–40

+40

µA

MIL

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