5STP12N7800 datasheet(2/6 Pages) ABB

Part #	5STP12N7800

Description	Phase Control Thyristor

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Manufacturer	ABB [ABB]

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5STP 12N8500

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1044-02 Nov. 04

page 2 of 6

On-state

Maximum rated values

1)

Parameter

Symbol Conditions

min

typ

max

Unit

Average on-state current

IT(AV)M

Half sine wave, Tc = 70°C

1200

A

RMS on-state current

IT(RMS)

1880

A

Peak non-repetitive surge

current

ITSM

35×10

3

A

Limiting load integral

I

2t

tp = 10 ms, Tvj = 90 °C,

VD = VR = 0 V

6.13×10

6

A

2s

Peak non-repetitive surge

current

ITSM

38×10

3

A

Limiting load integral

I

2t

tp = 8.3 ms, Tvj = 90 °C,

VD = VR = 0 V

5.99×10

6

A

2s

Characteristic values

Parameter

Symbol Conditions

min

typ

max

Unit

On-state voltage

VT

IT = 1500 A, Tvj = 90 °C

2

V

Threshold voltage

V(T0)

1.25

V

Slope resistance

rT

IT = 700 A - 2100 A, Tvj= 90 °C

0.48

m

Ω

Holding current

IH

Tvj = 25 °C

150

mA

Tvj = 90 °C

125

mA

Latching current

IL

Tvj = 25 °C

600

mA

Tvj = 90 °C

800

mA

Switching

Maximum rated values

1)

Parameter

Symbol Conditions

min

typ

max

Unit

Critical rate of rise of on-

state current

di/dtcrit

Cont.

f = 50 Hz

250

A/µs

Critical rate of rise of on-

state current

di/dtcrit

Tvj = 90 °C,

ITRM = 2000 A,

VD

≤ 5360 V,

IFG = A, tr = 0.5 µs

Cont.

f = 1Hz

1000

A/µs

Circuit-commutated turn-off

time

tq

Tvj = 90°C, ITRM = 2000 A,

VR = 200 V, diT/dt = -1 A/µs,

VD

≤ 0.67⋅V

DRM, dvD/dt = 20V/µs

600

µs

Characteristic values

Parameter

Symbol Conditions

min

typ

max

Unit

Recovery charge

Qrr

Tvj = 90°C, ITRM = A,

VR = 200 V,

diT/dt = -1 A/µs

2800

3400

µAs

Gate turn-on delay time

tgd

VD = 0.4

⋅V

RM, IFG = 2 A,

tr = 0.5 µs, Tvj = 25 °C

3

µs

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