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5STP12N7800 Datasheet(PDF) 2 Page - ABB |
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5STP12N7800 Datasheet(HTML) 2 Page - ABB |
2 / 6 page 5STP 12N8500 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1044-02 Nov. 04 page 2 of 6 On-state Maximum rated values 1) Parameter Symbol Conditions min typ max Unit Average on-state current IT(AV)M Half sine wave, Tc = 70°C 1200 A RMS on-state current IT(RMS) 1880 A Peak non-repetitive surge current ITSM 35×10 3 A Limiting load integral I 2t tp = 10 ms, Tvj = 90 °C, VD = VR = 0 V 6.13×10 6 A 2s Peak non-repetitive surge current ITSM 38×10 3 A Limiting load integral I 2t tp = 8.3 ms, Tvj = 90 °C, VD = VR = 0 V 5.99×10 6 A 2s Characteristic values Parameter Symbol Conditions min typ max Unit On-state voltage VT IT = 1500 A, Tvj = 90 °C 2 V Threshold voltage V(T0) 1.25 V Slope resistance rT IT = 700 A - 2100 A, Tvj= 90 °C 0.48 m Ω Holding current IH Tvj = 25 °C 150 mA Tvj = 90 °C 125 mA Latching current IL Tvj = 25 °C 600 mA Tvj = 90 °C 800 mA Switching Maximum rated values 1) Parameter Symbol Conditions min typ max Unit Critical rate of rise of on- state current di/dtcrit Cont. f = 50 Hz 250 A/µs Critical rate of rise of on- state current di/dtcrit Tvj = 90 °C, ITRM = 2000 A, VD ≤ 5360 V, IFG = A, tr = 0.5 µs Cont. f = 1Hz 1000 A/µs Circuit-commutated turn-off time tq Tvj = 90°C, ITRM = 2000 A, VR = 200 V, diT/dt = -1 A/µs, VD ≤ 0.67⋅V DRM, dvD/dt = 20V/µs 600 µs Characteristic values Parameter Symbol Conditions min typ max Unit Recovery charge Qrr Tvj = 90°C, ITRM = A, VR = 200 V, diT/dt = -1 A/µs 2800 3400 µAs Gate turn-on delay time tgd VD = 0.4 ⋅V RM, IFG = 2 A, tr = 0.5 µs, Tvj = 25 °C 3 µs |
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