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5STP12F4200 Datasheet(PDF) 2 Page - ABB |
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5STP12F4200 Datasheet(HTML) 2 Page - ABB |
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2 / 6 page  5STP 12F4200 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1021-03 Jan. 02 page 2 of 6 On-state Maximum rated values 1) Parameter Symbol Conditions min typ max Unit Average on-state current ITAVM Half sine wave, Tc = 70°C 1150 A RMS on-state current ITRMS 1800 A Peak non-repetitive surge current ITSM 15000 A Limiting load integral I 2t tp = 10 ms, Tvj = 125°C, VD = VR = 0 V 1125 kA 2s Peak non-repetitive surge current ITSM 16000 A Limiting load integral I 2t tp = 8.3 ms, Tvj = 125°C, VD = VR=0 V 1062 kA 2s Characteristic values Parameter Symbol Conditions min typ max Unit On-state voltage VT IT = 2000 A, Tvj= 125°C 2.1 V Threshold voltage VT0 0.95 V Slope resistance rT IT = 600 A - 1800 A, Tvj= 125°C 0.575 m Ω Holding current IH Tvj = 25°C 80 mA Tvj = 125°C 60 mA Latching current IL Tvj = 25°C 500 mA Tvj = 125°C 200 mA Switching Maximum rated values 1) Parameter Symbol Conditions min typ max Unit Critical rate of rise of on- state current di/dtcrit Cont. f = 50 Hz 100 A/µs Critical rate of rise of on- state current di/dtcrit Tvj = 125°C, ITRM = 2000 A, VD ≤ 0.67⋅VDRM, IFG = 2 A, tr = 0.5 µs Cont. f = 1Hz 1000 A/µs Circuit-commutated turn-off time tq Tvj = 125°C, ITRM = 2000 A, VR = 200 V, diT/dt = -5 A/µs, VD ≤ 0.67⋅VDRM, dvD/dt = 20 V/µs, 600 µs Characteristic values Parameter Symbol Conditions min typ max Unit Recovery charge Qrr Tvj = 125°C, ITRM = 2000 A, VR = 200 V, diT/dt = -5 A/µs 2500 4000 µAs Delay time td VD = 0.4 ⋅VDRM, IFG = 2 A, tr = 0.5 µs 2µs |
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