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2SK3099LS Datasheet(PDF) 1 Page - Sanyo Semicon Device

Part No. 2SK3099LS
Description  N-Channel Silicon MOSFET General-Purpose Switching Device
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Maker  SANYO [Sanyo Semicon Device]
Homepage  http://www.ssdc-jp.com/eng/
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2SK3099LS
No.8628-1/3
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN8628
N0806QB SY IM TC-00000315
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
SANYO Semiconductors
DATA SHEET
2SK3099LS
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
Low ON-resistance.
Low Qg.
Ultrahigh-Speed Switching Applications.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
400
V
Gate-to-Source Voltage
VGSS
±30
V
Drain Current (DC)
ID
9A
Drain Current (Pulse)
IDP
PW
≤10µs, duty cycle≤1%
36
A
Allowable Power Dissipation
PD
2.0
W
Tc=25
°C35
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Enargy (Single Pulse) *1
EAS
92.6
mJ
Avalanche Current *2
IAV
9A
*1 VDD=50V, L=2mH, IAV=9A
*2 L
≤2mH, single pulse
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
400
V
Zero-Gate Voltage Drain Current
IDSS
VDS=320V, VGS=0V
1.0
mA
Gate-to-Source Leakage Current
IGSS
VGS= ±30V, VDS=0V
±100
nA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
3.0
4.0
V
Forward Transfer Admittance
yfs
VDS=10V, ID=6A
2.9
5.8
S
Static Drain-to-Source On-State Resistance
RDS(on)
ID=6A, VGS=15V
0.43
0.55
Marking : K3099
Continued on next page.




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