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5SNS0300U1201 Datasheet(PDF) 2 Page - ABB

Part No. 5SNS0300U1201
Description  IGBT Module LoPak5 SPT
Download  9 Pages
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Maker  ABB [ABB]
Homepage  http://www.abb.com
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5SNS0300U1201 Datasheet(HTML) 2 Page - ABB

   
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5SNS 0300U120100
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1528-02 July 03
page 2 of 9
IGBT characteristic values
Parameter
Symbol Conditions
min
typ
max
Unit
Collector (-emitter)
breakdown voltage
V(BR)CES
VGE = 0 V, IC = 10 mA, Tvj = 25 °C
1200
V
Tvj = 25 °C
1.9
2.3
V
Collector-emitter
2)
saturation voltage
VCE sat
IC = 300 A, VGE = 15 V
Tvj = 125 °C
2.1
V
Tvj = 25 °C
1
mA
Collector cut-off current
ICES
VCE = 1200 V, VGE = 0 V
Tvj = 125 °C
15
mA
Gate leakage current
IGES
VCE = 0 V, VGE =
±20 V, Tvj = 125 °C
-500
500
nA
Gate-emitter threshold voltage
VGE(TO)
IC = 12 mA, VCE = VGE, Tvj = 25 °C
4.5
6.5
V
Gate charge
Qge
IC = 300 A, VCE = 600 V,
VGE = -15 V .. 15 V
4000
nC
Input capacitance
Cies
27
Output capacitance
Coes
3.0
Reverse transfer capacitance
Cres
VCE = 25 V, VGE = 0 V, f = 1 MHz,
Tvj = 25 °C
1.3
nF
Tvj = 25 °C
150
Turn-on delay time
td(on)
Tvj = 125 °C
180
ns
Tvj = 25 °C
80
Rise time
tr
VCC = 600 V,
IC = 300 A,
RG = 3.3
W,
VGE =
±15 V,
Ls = 55 nH, inductive load
Tvj = 125 °C
80
ns
Tvj = 25 °C
770
Turn-off delay time
td(off)
Tvj = 125 °C
750
ns
Tvj = 25 °C
60
Fall time
tf
VCC = 600 V,
IC = 300 A,
RG = 3.3
W,
VGE =
±15 V,
Ls = 55 nH, inductive load
Tvj = 125 °C
70
ns
Tvj = 25 °C
19
Turn-on switching energy
Eon
VCC = 600 V, IC = 300 A,
VGE = ±15, RG = 3.3
W,
Ls = 55 nH, inductive load
Tvj = 125 °C
28
mJ
Tvj = 25 °C
24
Turn-off switching energy
Eoff
VCC = 600 V, IC = 300 A,
VGE = ±15, RG = 3.3
W,
Ls = 55 nH, inductive load
Tvj = 125 °C
34
mJ
Short circuit current
ISC
tpsc ≤ 10 µs, VGE = 15 V, Tvj = 125 °C,
VCC = 900 V, VCEM CHIP ≤ 1200 V
1650
A
Module stray inductance
plus to minus
Ls DC
20
nH
Th = 25 °C
0.9
Resistance, terminal-chip
RCC’+EE’
Th = 125 °C
1.0
mΩ
2) Collector emitter saturation voltage is given at chip level


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