5SNA1200E3301 datasheet(3/9 Pages) ABB

Part #	5SNA1200E3301

Description	IGBT Module

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Manufacturer	ABB [ABB]

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5SNA 1200E330100

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1556-03 May 05

page 3 of 9

Diode characteristic values 5)

Parameter

Symbol

Conditions

min

typ

max

Unit

Tvj = 25 °C

2.0

2.3

2.6

Forward voltage 6)

VF

IF = 1200 A

Tvj = 125 °C

2.0

2.35

2.6

V

Tvj = 25 °C

1100

Reverse recovery current

Irr

Tvj = 125 °C

1350

A

Tvj = 25 °C

715

Recovered charge

Qrr

Tvj = 125 °C

1280

µC

Tvj = 25 °C

520

Reverse recovery time

trr

Tvj = 125 °C

1450

ns

Tvj = 25 °C

840

Reverse recovery energy

Erec

VCC = 1800 V,

IF = 1200 A,

VGE =

±15 V,

RG = 1.5

Ω

Lσ = 100 nH

inductive load

Tvj = 125 °C

1530

mJ

5) Characteristic values according to IEC 60747 – 2

6) Forward voltage is given at chip level

Thermal properties 7)

Parameter

Symbol

Conditions

min

typ

max

Unit

IGBT thermal resistance

junction to case

Rth(j-c)IGBT

0.0085 K/W

Diode thermal resistance

junction to case

Rth(j-c)DIODE

0.017 K/W

Thermal resistance case 2)

to heatsink

Rth(c-s)

per module,

λ grease = 1W/m x K

0.006

K/W

2) For detailed mounting instructions refer to ABB Document No. 5SYA2039

Mechanical properties 7)

Parameter

Symbol

Conditions

min

typ

max

Unit

Dimensions

L x W x H Typical , see outline drawing

190 x 140 x 38

mm

Term. to base:

23

Clearance distance in air

da

according to IEC 60664-1

and EN 50124-1

Term. to term:

19

mm

Term. to base:

33

Surface creepage distance

ds

according to IEC 60664-1

and EN 50124-1

Term. to term:

32

mm

Mass

m

1380

g

7) Thermal and mechanical properties according to IEC 60747 – 15

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