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5SLX12L2510 Datasheet(PDF) 2 Page - ABB |
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5SLX12L2510 Datasheet(HTML) 2 Page - ABB |
2 / 3 page 5SLX 12L2510 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1664-02 Feb. 05 page 2 of 3 0 20 40 60 80 100 120 140 160 180 200 0 0.5 1 1.5 2 2.5 VF [V] 25 °C 125 °C 0 25 50 75 100 125 150 0 50 100 150 200 IF [A] Qrr Erec Irr VR = 1250 V di/dt = 440 A/µs VGE = ±15 V Tvj = 125 °C Lσ = 1.2 µH Fig. 1 Typical forward characteristics Fig. 2 Typical reverse recovery characteristics vs. forward current -200 -150 -100 -50 0 50 100 150 0 1000 2000 3000 4000 5000 time [ns] -1400 -1200 -1000 -800 -600 -400 -200 0 VR = 1250 V IF = 100 A di/dt = 440 A/µs Tvj = 125 °C Lσ = 1.2 µH IR VR 0 20 40 60 80 100 120 140 160 0 100 200 300 400 500 600 700 800 di/dt [A/µs] Erec Irr Qrr VR = 1250 V IF = 100 A Tvj = 125 °C Lσ = 1.2 µH Fig. 3 Typical reverse recovery behaviour Fig. 4 Typical reverse recovery characteristics vs. di/dt |
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