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CM15AD00-12H Datasheet(PDF) 4 Page - Mitsubishi Electric Semiconductor

Part No. CM15AD00-12H
Description  MEDIUM POWER SWITCHING USE FLAT BASE, INSULATED TYPE
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

CM15AD00-12H Datasheet(HTML) 4 Page - Mitsubishi Electric Semiconductor

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Sep. 2000
MITSUBISHI IGBT MODULES
CM15AD00-12H
MEDIUM POWER SWITCHING USE
FLAT BASE, INSULATED TYPE
IDRM
IRRM
ITM
IGT
VGT
IH
Rth(j-c)
Repetitive peak off-state current
Repetitive peak reverse current
On-state voltage
Gate trigger current
Gate trigger voltage
Holding current
Thermal resistance
THYRISTOR PART
dv/dt
VD=800V
VR=800V
IT=15A, instantaneous means
VD=6V, IT=1A
VD=6V, IT=1A
Tj=125
°C, VD=540V, exp. waveform
Critical rate of rise of off-state
Voltage
1
1
1.50
50
3
1.75
mA
mA
V
mA
V
mA
°C/W
50
Symbol
Parameter
Test conditions
Unit
Typ.
Limits
Min.
Max.
500
V/
µs
Resistance
Temperature coefficient
Measured between N-N1
m
%/
°C
5.9
0.048
R
Symbol
Parameter
Test conditions
Unit
Typ.
Limits
Min.
Max.
RESISTOR PART
Resistance
B Constant
TC = 25
°C
Resistance at 25
°C, 50°C
(Note.5)
k
K
100
4000
RTH
B
Symbol
Parameter
Test conditions
Unit
Typ.
Limits
Min.
Max.
THERMISTOR PART
Note. 1 IE, VEC, trr, Qrr, diE/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
2 Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
3 Junction temperature (Tj) should not increase beyond 150
°C.
4 Pulse width and repetition rate should be such as to cause negligible temperature rise.
5 B = (InR1-InR2)/(1/T1-1/T2)R1 : Resistance at T1(K)
R2 : Resistance at T2(K)
*1 : Typical value is measured by using Shin-etsu Silicone “G-746”.
Contact thermal resistance
Case to fin, Thermal compound applied
*1 (1 module)
°C/W
0.05
Rth(c-f)
Symbol
Parameter
Test conditions
Unit
Typ.
Limits
Min.
Max.
COMMON RATING


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