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ICS889832AKT Datasheet(PDF) 11 Page - Integrated Device Technology |
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ICS889832AKT Datasheet(HTML) 11 Page - Integrated Device Technology |
11 / 15 page IDT™ / ICS™ LVDS FANOUT BUFFER 11 ICS889832AK REV A SEPTEMBER 19, 2006 ICS889832 LOW SKEW, 1-TO-4 DIFFERENTIAL-TO-LVDS FANOUT BUFFER POWER CONSIDERATIONS This section provides information on power dissipation and junction temperature for the ICS889832. Equations and example calculations are also provided. 1. Power Dissipation. The total power dissipation for the ICS889832 is the sum of the core power plus the power dissipated in the load(s). The following is the power dissipation for V DD = 2.5V + 5% = 2.625V, which gives worst case results. • Power_ MAX = V DD_MAX * I DD_MAX = 2.625V * 120mA = 315mW 2. Junction Temperature. Junction temperature, Tj, is the temperature at the junction of the bond wire and bond pad and directly affects the reliability of the device. The maximum recommended junction temperature for HiPerClockS TM devices is 125°C. The equation for Tj is as follows: Tj = θ JA * Pd_total + TA Tj = Junction Temperature θ JA = Junction-to-Ambient Thermal Resistance Pd_total = Total Device Power Dissipation (example calculation is in section 1 above) T A = Ambient Temperature In order to calculate junction temperature, the appropriate junction-to-ambient thermal resistance θ JA must be used. Assuming no air flow of and a multi-layer board, the appropriate value is 51.5°C/W per Table 6 below. Therefore, Tj for an ambient temperature of 85°C with all outputs switching is: 85°C + 0.315W * 51.5°C/W = 101.2°C. This is well below the limit of 125°C. This calculation is only an example. Tj will obviously vary depending on the number of loaded outputs, supply voltage, air flow, and the type of board (single layer or multi-layer). TABLE 6. THERMAL RESISTANCE θθθθθ JA FOR 16-PIN VFQFN, FORCED CONVECTION θθθθθ JA vs. 0 Air Flow (Linear Feet per Minute) 0 Multi-Layer PCB, JEDEC Standard Test Boards 51.5°C/W |
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