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V8P10 Datasheet(PDF) 1 Page - Vishay Siliconix

Part No. V8P10
Description  High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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V8P10 Datasheet(HTML) 1 Page - Vishay Siliconix

   
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Vishay General Semiconductor
V8P10
Document Number: 89005
Revision: 26-Jun-07
www.vishay.com
1
New Product
High Current Density Surface Mount
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.466 V at IF = 4 A
FEATURES
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Trench MOS Schottky Technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020C, LF max peak
of 260 °C
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters, free-
wheeling, dc-to-dc converters and polarity protection
applications.
MECHANICAL DATA
Case: TO-277A (SMPC)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
TO-277A (SMPC)
Anode 1
Anode 2
Cathode
K
K
2
1
TMBS®
eSMPTM Series
MAJOR RATINGS AND CHARACTERISTICS
IF(AV)
8 A
VRRM
100 V
IFSM
150 A
EAS
100 mJ
VF at IF = 8 A
0.582 V
Tj max.
150 °C
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V8P10
UNIT
Device marking code
V810
Maximum repetitive peak reverse voltage
VRRM
100
V
Maximum average forward rectified current (see Fig. 1)
IF(AV)
8A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
150
A
Non-repetitive avalanche energy
at IAS = 2.0 A, L = 50 mH, Tj = 25 °C
EAS
100
mJ
Voltage rate of change (rated VR)
dv/dt
10000
V/µs
Operating junction and storage temperature range
TJ, TSTG
- 40 to + 150
°C


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