5SHX 19L6010

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1229-02 Aug 07

page 5 of 13

Thermal

Maximum rated values

Note 1

Parameter

Symbol

Conditions

min

typ

max

Unit

Junction operating temperature

0

125

°C

Storage temperature range

-40

60

°C

Ambient operational temperature

0

50

°C

Characteristic values

Parameter

Symbol

Conditions

min

typ

max

Unit

Thermal resistance junction-to-case

of GCT

12.6

K/kW

Thermal resistance case-to-

heatsink of GCT

Double side cooled

No heat flow between GCT

and Diode part

4.2

K/kW

Thermal resistance junction-to-case

of Diode

26

K/kW

Thermal resistance case-to-

heatsink of Diode

Double side cooled

No heat flow between GCT

and Diode part

10.4

K/kW

Analytical function for transient thermal

impedance:

GCT

)

e

-

(1

R

=

(t)

Z

n

1

i

t/

-

i

thJC

i

∑

=

τ

i

1

2

3

4

8.769

1.909

1.218

0.699

τ

0.5407

0.0792

0.0091

0.0025

Diode

i

1

2

3

4

17.057

5.007

2.498

1.439

τ

0.5460

0.0829

0.0089

0.0023

Fig. 1

Transient thermal impedance (junction-to-

case) vs. time (max. values)

Note 1

Max. Turn-off current for Lifetime operation

•

calculated lifetime of on-board capacitors

20 years

•

with slightly forced air cooling (air velocity

> 0.5 m/s)

•

strong air cooling allows for increased

ambient temperature

Fig. 2

Max. turn-off current vs. frequency for lifetime

operation