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SWTS1007 Datasheet(PDF) 4 Page - Seoul Semiconductor |
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SWTS1007 Datasheet(HTML) 4 Page - Seoul Semiconductor |
4 / 15 page Rev. 1.00 SWTS1007 3. Absolute Maximum Ratings ( Ta = 25°C) Parameter Symbol Value Unit Power Dissipation Pd*1 120 mW Forward Current IF 30 mA Peak Forward Current IFM*2 100 mA Reverse Voltage VR 5 V Operating Temperature Topr -30 ~ +85 °C Storage Temperature Tstg -40 ~ +100 °C Junction Temperature Tj 125 °C *1 Care is to be taken that Power Dissipation does not exceed the Absolute Maximum Rating of the product. *2 IFM conditions : Pulse width TW ≤ 0.1ms, Duty ratio ≤ 1/10 4. Electro-Optical Characteristics ( Ta = 25°C) Item Symbol Condition Min Typ Max Unit Rank Y 2.7 - 3.0 Rank Z 3.0 - 3.3 Forward Voltage Rank A VF IF = 20 mA 3.3 - 3.7 V Reverse Current IR VR = 5 V - - 50 µA Rank J2 1200 - 1300 Rank J3 1300 - 1400 Rank J4 1400 - 1500 Rank J5 1500 - 1600 Luminous Intensity*1 Rank J6 IV IF = 20 mA 1600 - 1700 mcd Viewing Angle*2 2 θ1/2 IF = 20 mA 120 ˚ x 0.264 - 0.296 Rank b y 0.248 - 0.295 x 0.287 - 0.311 Rank e y 0.276 - 0.315 x 0.307 - 0.330 Color Coordinates*3 Rank f y IF = 20 mA 0.294 - 0.339 - *1 The luminous intensity IV is measured at the peak of the spatial pattern which may not be aligned with the mechanical axis of the LED package. Luminous Intensity Measurement allowance is ±10%. *2 θ1/2 is the off-axis where the luminous intensity is 1/2 of the peak intensity. *3 Measurement Uncertainty of the Color Coordinates is ±0.01 * Note : All products confirm to the listed minimum and maximum specifications for electric and optical characteristics, when operated at 20mA within the maximum ratings shown above. All measurements were made under the standardized environment of Seoul Semiconductor. SEOUL SEMICONDUCTOR CO., LTD. 3 SSC-QP-7-03-44(갑) |
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