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DDG-GJS-E2 Datasheet(PDF) 4 Page - DOMINANT Semiconductors |
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DDG-GJS-E2 Datasheet(HTML) 4 Page - DOMINANT Semiconductors |
4 / 13 page 25/07/2006 V2.0 4 Unit Absolute Maximum Ratings Maximum Value DC forward current Peak pulse current; (tp ≤ 10µs, Duty cycle = 0.1) Reverse voltage ESD Thereshold (HBM) LED juction temperature Operating temperature Storage temperature Power dissipation (at room temperature) 30 100 12 2 125 -40 … +100 -40 … +100 75 mA mA V kV ˚C ˚C ˚C mW GaP : DDx-GJS-I2 DOMINANT TM Semiconductors Innovating Illumination Typ. (V) Vf @ If = 2mA Forward voltage, Vf is measured with an accuracy of ± 0.1 V. Electrical Characteristics at Ta=25˚C Max. (V) Vr @ Ir = 10µA Min (V) Part Number DDR-GJ, DDO-GJ, DDY-GJ, DDG-GJ 1.80 2.30 100µA |
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