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IRG4BC40WPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRG4BC40WPBF Datasheet(HTML) 2 Page - International Rectifier |
2 / 9 page IRG4BC40WPbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) 98 147 IC =20A Qge Gate - Emitter Charge (turn-on) 12 18 nC VCC = 400V See Fig.8 Qgc Gate - Collector Charge (turn-on) 36 54VGE = 15V td(on) Turn-On Delay Time 27 tr Rise Time 22 TJ = 25°C td(off) Turn-Off Delay Time 100 150 IC = 20A, VCC = 480V tf Fall Time 74110 VGE = 15V, RG = 10Ω Eon Turn-On Switching Loss 0.11 Energy losses include "tail" Eoff Turn-Off Switching Loss 0.23 mJ See Fig. 9,10, 14 Ets Total Switching Loss 0.340.4 5 td(on) Turn-On Delay Time 25 TJ = 150°C, tr Rise Time 23 IC = 20A, VCC = 480V td(off) Turn-Off Delay Time 170 VGE = 15V, RG = 10Ω tf Fall Time 124 Energy losses include "tail" Ets Total Switching Loss 0.85 mJ See Fig. 10,11, 14 LE Internal Emitter Inductance 7.5 nH Measured 5mm from package Cies Input Capacitance 1900 VGE = 0V Coes Output Capacitance 140 pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance 35 = 1.0MHz Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 V VGE = 0V, IC = 250µA V(BR)ECS Emitter-to-Collector Breakdown Voltage 18 V VGE = 0V, IC = 1.0A ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage 0.44 V/°C VGE = 0V, IC = 1.0mA 2.05 2.5 IC = 20A VGE = 15V VCE(ON) Collector-to-Emitter Saturation Voltage 2.36 IC = 40A See Fig.2, 5 1.90 IC = 20A , TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 6.0 VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage 13 mV/°C VCE = VGE, IC = 250µA gfe Forward Transconductance
18 28 S VCE = 100 V, IC =20A 250 VGE = 0V, VCE = 600V 2.0 VGE = 0V, VCE = 10V, TJ = 25°C 2500 VGE = 0V, VCE = 600V, TJ = 150°C IGES Gate-to-Emitter Leakage Current ±100 nA VGE = ±20V Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ICES Zero Gate Voltage Collector Current V µA Switching Characteristics @ TJ = 25°C (unless otherwise specified) ns ns Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot. Notes: Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10Ω, (See fig. 13a) Repetitive rating; pulse width limited by maximum junction temperature. |
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