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BC546A Datasheet(PDF) 4 Page - NXP Semiconductors |
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BC546A Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 9 page 2004 Nov 25 4 Philips Semiconductors Product specification NPN general purpose transistors BC546; BC547 CHARACTERISTICS Tamb =25 °C unless otherwise specified. Notes 1. VBEsat decreases by about 1.7 mV/K with increasing temperature. 2. VBE decreases by about 2 mV/K with increasing temperature. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector-base cut-off current VCB = 30 V; IE =0 A −− 15 nA VCB = 30 V; IE = 0 A; Tj = 150 °C −− 5 µA IEBO emitter-base cut-off current VEB =5V; IC =0 A −− 100 nA hFE DC current gain VCE =5V; IC =10 µA; see Figs 2, 3 and 4 BC546A − 90 − BC546B; BC547B − 150 − BC547C − 270 − DC current gain VCE =5V; IC = 2 mA; see Figs 2, 3 and 4 BC546A 110 180 220 BC546B; BC547B 200 290 450 BC547C 420 520 800 BC547 110 − 800 VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA − 90 250 mV IC = 100 mA; IB =5mA − 200 600 mV VBEsat base-emitter saturation voltage IC = 10 mA; IB = 0.5 mA; note 1 − 700 − mV IC = 100 mA; IB = 5 mA; note 1 − 900 − mV VBE base-emitter voltage VCE =5V; IC = 2 mA; note 2 580 660 700 mV VCE =5V; IC =10mA −− 770 mV Cc collector capacitance VCB = 10 V; IE =ie = 0 A; f = 1 MHz − 1.5 − pF Ce emitter capacitance VEB = 0.5 V; IC =ic = 0 A; f = 1 MHz − 11 − pF fT transition frequency VCE =5V; IC = 10mA; f = 100 MHz 100 −− MHz F noise figure VCE =5V; IC = 200 µA; RS =2kΩ; f = 1 kHz; B = 200 Hz − 210 dB |
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