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TEA6324T Datasheet(PDF) 7 Page - NXP Semiconductors |
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TEA6324T Datasheet(HTML) 7 Page - NXP Semiconductors |
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7 / 36 page  1997 Mar 13 7 Philips Semiconductors Preliminary specification Sound control circuit TEA6324T CHARACTERISTICS VCC = 8.5 V; RS = 600 Ω; RL =10kΩ; CL = 2.5 nF; AC coupled; f = 1 kHz; Tamb =25 °C; gain control Gv = 0 dB; bass linear; treble linear; balance in mid position; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCC supply voltage 7.5 8.5 9.5 V ICC supply current − 26 33 mA VDC internal DC voltage at inputs and outputs 3.83 4.25 4.68 V Vref internal reference voltage at pin 16 − 4.25 − V Gv(max) maximum voltage gain RS =0 Ω; RL = ∞ 19 20 21 dB Vo(rms) output voltage level (RMS value) for Pmax at the power output stage THD ≤ 0.1%; see Fig.10 − 2000 − mV start of clipping THD = 1% 2300 −− mV RL =2kΩ; CL = 10 nF; THD = 1% 2000 −− mV Vi(rms) input sensitivity Vo = 2000 mV; Gv =20dB − 200 − mV fro roll-off frequency CKIN = 220 nF; CKVL = 220 nF; Zi =Zi(min) low frequency ( −1 dB) 60 −− Hz low frequency ( −3 dB) 30 −− Hz high frequency ( −1 dB) 20000 −− Hz CKIN = 470 nF; CKVL = 100 nF; Zi =Zi(typ) low frequency ( −3 dB) 17 −− Hz αcs channel separation Vi = 2 V; frequency range 250 Hz to 10 kHz 90 96 − dB THD total harmonic distortion frequency range 20 Hz to 12.5 kHz Vi = 100 mV; Gv =20dB − 0.1 − % Vi = 1 V; Gv =0dB − 0.05 0.15 % Vi = 2 V; Gv =0dB − 0.1 − % Vi = 2 V; Gv = −10 dB − 0.1 − % RR ripple rejection Vr(rms) < 200 mV f = 100 Hz 70 76 − dB f = 40 Hz to 12.5 kHz − 66 − dB (S+N)/N signal-plus-noise to noise ratio unweighted; 20 Hz to 20 kHz RMS; Vo = 2.0 V; see Figs 5 and 6 − 105 − dB CCIR468-2 weighted; quasi peak; Vo = 2.0 V Gv =0dB − 95 − dB Gv =12dB − 88 − dB Gv =20dB − 81 − dB |
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