2

RF Device Data

Freescale Semiconductor

MW4IC915NBR1 MW4IC915GNBR1

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain-Source Voltage

-0.5. +65

Vdc

Gate-Source Voltage

-0.5. +15

Vdc

Storage Temperature Range

-65 to +175

°C

Operating Junction Temperature

200

°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Unit

Thermal Resistance, Junction to Case

GSM Application

GSM EDGE Application

CDMA Application

7.3

1.7

7.3

1.8

7.4

1.9

°C/W

Table 3. ESD Protection Characteristics

Test Conditions

Class

Human Body Model

1 (Minimum)

Machine Model

M3 (Minimum)

Charge Device Model

C2 (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD 22-A113, IPC/JEDEC J-STD-020

3

260

°C

Characteristic

Symbol

Min

Typ

Max

Unit

f1 = 869 MHz, f2 = 869.1 MHz and f1 = 960 MHz and f2 = 960.1 MHz, Two-Tone

Power Gain

29

31

—

dB

Power Added Efficiency

PAE

29

31

—

%

Intermodulation Distortion

IMD

—

-40

-29

dBc

Input Return Loss

IRL

—

-15

-10

dB

1. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

(continued)