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H5N2522FN Datasheet(PDF) 5 Page - Renesas Technology Corp

Part No. H5N2522FN
Description  Silicon N Channel MOS FET High Speed Power Switching
Download  7 Pages
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Maker  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
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H5N2522FN Datasheet(HTML) 5 Page - Renesas Technology Corp

   
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H5N2522FN
REJ03G1573-0210 Rev.2.10 May 08, 2007
Page 5 of 6
Vin Monitor
D.U.T.
Vin
10 V
RL
VDD
= 120V
tr
td(on)
Vin
90%
90%
10%
10%
Vout
td(off)
Vout
Monitor
10
90%
10%
t f
Switching Time Test Circuit
Waveform
10
1
0.1
0.01
0.001
10
µ
100
µ
1 m
10 m
100 m
10
1
100
Tc = 25
°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot
pulse
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width
PDM
PW
T
D =
PW
T
θch – c (t) = γ s (t) • θch – c
θch – c = 3.57°C/W, Tc = 25°C


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