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RQG2001URAQF Datasheet(PDF) 7 Page - Renesas Technology Corp

Part # RQG2001URAQF
Description  NPN Silicon Germanium Transistor High Frequency Medium Power Amplifier
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RQG2001URAQF Datasheet(HTML) 7 Page - Renesas Technology Corp

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RQG2001URAQF
REJ03G1554-0100 Rev.1.00 Aug 10, 2007
Page 7 of 26
10
5
4
3
2
1.5
1
.8
-2
-3
-4
-5
-10
.6
.4
.2
0
-.2
-.4
-.6
-.8
-1
-1.5
.2
.4
.6 .8 1
2
3 4 5
1.5
10
0°
30°
60°
90°
120°
150°
180°
-150°
-90°
-60°
-30°
-120°
30°
60°
90°
120°
150°
180°
-150°
-90°
-60°
-30°
-120°
10
5
4
3
2
1.5
1
.8
-2
-3
-4
-5
-10
.6
.4
.2
0
-.2
-.4
-.6
-.8
-1
-1.5
.2
.4
.6 .8 1
2
3 4 5
1.5
10
Scale: 12 / div.
Scale: 0.03 / div.
0°
S11 Parameter vs. Frequency
S21 Parameter vs. Frequency
S12 Parameter vs. Frequency
S22 Parameter vs. Frequency
Condition: VCE = 3 V, IC = 40 mA, ZO = 50 Ω
100 to 1000 MHz (100 MHz Step)
1000 to 4000 MHz (200 MHz Step)
Condition: VCE = 3 V, IC = 40 mA, ZO = 50 Ω
100 to 1000 MHz (100 MHz Step)
1000 to 4000 MHz (200 MHz Step)
Condition: VCE = 3 V, IC = 40 mA, ZO = 50 Ω
100 to 1000 MHz (100 MHz Step)
1000 to 4000 MHz (200 MHz Step)
Condition: VCE = 3 V, IC = 40 mA, ZO = 50 Ω
100 to 1000 MHz (100 MHz Step)
1000 to 4000 MHz (200 MHz Step)


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