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RQG1004UPAQL Datasheet(PDF) 1 Page - Renesas Technology Corp |
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RQG1004UPAQL Datasheet(HTML) 1 Page - Renesas Technology Corp |
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REJ03G1552-0100 Rev.1.00 Jul 20, 2007 Page 1 of 18 RQG1004UPAQL NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier REJ03G1552-0100 Rev.1.00 Jul 20, 2007 Features • Ideal for LNA applications. e.g. Tuner, Wireless LAN, Cordless phone and etc. • High gain and low noise. MSG = 25 dB typ. , NF = 0.65 dB typ. at VCE = 2 V, IC = 5 mA, f = 0.9 GHz MSG = 22 dB typ. , NF = 0.75 dB typ. at VCE = 2 V, IC = 5 mA, f = 1.8 GHz MSG = 21 dB typ. , NF = 0.85 dB typ. at VCE = 2 V, IC = 5 mA, f = 2.4 GHz MSG = 15 dB typ. , NF = 1.3 dB typ. at VCE = 2 V, IC = 10 mA, f = 5.8 GHz • High transition frequency fT = 41 GHz typ. • Small and low height package MFPAK-4 (1.4 x 0.8 x 0.55(max) mm) Outline 1.Emitter 2.Collector 3.Emitter 4.Base 1 2 3 4 RENESAS package code: PUSF0004ZA-A (Package name: MFPAK-4) Note: Marking is “UP-”. Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 8 V Collector to emitter voltage VCEO 3.5 V Emitter to base voltage VEBO 1.2 V Collector current IC 35 mA Pc 80 mW Collector power dissipation Pc 200 note1 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. Value on PCB (FR-4 : 40 x 40 x 1.6mm double side) |
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