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RQG1001UPAQF Datasheet(PDF) 2 Page - Renesas Technology Corp

Part # RQG1001UPAQF
Description  NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RQG1001UPAQF Datasheet(HTML) 2 Page - Renesas Technology Corp

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RQG1001UPAQF
REJ03G1551-0100 Rev.1.00 Jul 20, 2007
Page 2 of 16
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min.
Typ
Max.
Unit
Test Conditions
DC current transfer ratio
hFE
100
200
300
VCE = 2 V, IC = 5 mA
Reverse Transfer Capacitance
Cre
0.08
pF
VCB = 2 V, IE = 0, f = 1 MHz
Transition Frequency
fT
35
GHz
VCE = 2 V, IC = fT peak, f = 1 GHz
0.9 GHz
22
1.8 GHz
19
2.4 GHz
17
VCE = 2 V, IC = 5 mA
Forward Transfer
Coefficient
5.8 GHz
|S21|
2
11
dB
VCE = 2 V, IC = 10 mA
0.9 GHz
25
1.8 GHz
22
2.4 GHz
21
VCE = 2 V, IC = 5 mA
Maximum Stable Gain
Note1
5.8 GHz
MSG
15
dB
VCE = 2 V, IC = 10 mA
Maximum Available Gain
Note2
5.8 GHz
MAG
13
dB
VCE = 2 V, IC = 10 mA
0.9 GHz
22
1.8 GHz
19.5
2.4 GHz
18
VCE = 2 V, IC = 5 mA
Power Gain
5.8 GHz
PG
11.5
dB
VCE = 2 V, IC = 10 mA
0.9 GHz
0.7
1.8 GHz
0.75
2.4 GHz
0.85
VCE = 2 V, IC = 5 mA
Noise figure
5.8 GHz
NF
1.3
dB
VCE = 2 V, IC = 10 mA
Notes: 1. MSG = |S21| / |S12|
2. MAG = |S21| / |S12|(K-(K
2-1)1/2)


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