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RQG1001UPAQF Datasheet(PDF) 1 Page - Renesas Technology Corp |
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RQG1001UPAQF Datasheet(HTML) 1 Page - Renesas Technology Corp |
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REJ03G1551-0100 Rev.1.00 Jul 20, 2007 Page 1 of 16 RQG1001UPAQF NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier REJ03G1551-0100 Rev.1.00 Jul 20, 2007 Features • Ideal for LNA applications. e.g. Tuner, Wireless LAN, Cordless phone and etc. • High gain and low noise. MSG = 25 dB typ., NF = 0.65 dB typ. at VCE = 2 V, IC = 5 mA, f = 0.9 GHz MSG = 22 dB typ., NF = 0.75 dB typ. at VCE = 2 V, IC = 5 mA, f = 1.8 GHz MSG = 21 dB typ., NF = 0.85 dB typ. at VCE = 2 V, IC = 5 mA, f = 2.4 GHz MSG = 15 dB typ., NF = 1.3 dB typ. at VCE = 2 V, IC = 10 mA, f = 5.8 GHz • High transition frequency fT = 35 GHz typ. • CMPAK-4 (2.0 x 1.25 x 1.1(max) mm) Outline RENESAS Package code: PTSP0004ZA-A (Package name: CMPAK-4) 1. Emitter 2. Collector 3. Emitter 4. Base 1 4 3 2 1 4 3 2 Note: Marking is “UP-”. Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 8 V Collector to emitter voltage VCEO 3.5 V Emitter to base voltage VEBO 1.2 V Collector current IC 35 mA Pc 100 mW Collector power dissipation Pc 250 note1 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. Value on PCB (FR-4 : 40 x 40 x 1.6mm double side) |
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