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RQG1001UPAQF Datasheet(PDF) 1 Page - Renesas Technology Corp

Part No. RQG1001UPAQF
Description  NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
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Maker  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RQG1001UPAQF Datasheet(HTML) 1 Page - Renesas Technology Corp

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REJ03G1551-0100 Rev.1.00 Jul 20, 2007
Page 1 of 16
RQG1001UPAQF
NPN Silicon Germanium Transistor
High Frequency Low Noise Amplifier
REJ03G1551-0100
Rev.1.00
Jul 20, 2007
Features
• Ideal for LNA applications. e.g. Tuner, Wireless LAN, Cordless phone and etc.
• High gain and low noise.
MSG = 25 dB typ., NF = 0.65 dB typ. at VCE = 2 V, IC = 5 mA, f = 0.9 GHz
MSG = 22 dB typ., NF = 0.75 dB typ. at VCE = 2 V, IC = 5 mA, f = 1.8 GHz
MSG = 21 dB typ., NF = 0.85 dB typ. at VCE = 2 V, IC = 5 mA, f = 2.4 GHz
MSG = 15 dB typ., NF = 1.3 dB typ. at VCE = 2 V, IC = 10 mA, f = 5.8 GHz
• High transition frequency
fT = 35 GHz typ.
• CMPAK-4 (2.0 x 1.25 x 1.1(max) mm)
Outline
RENESAS Package code: PTSP0004ZA-A
(Package name: CMPAK-4)
1. Emitter
2. Collector
3. Emitter
4. Base
1
4
3
2
1
4
3
2
Note:
Marking is “UP-”.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
8
V
Collector to emitter voltage
VCEO
3.5
V
Emitter to base voltage
VEBO
1.2
V
Collector current
IC
35
mA
Pc
100
mW
Collector power dissipation
Pc
250
note1
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. Value on PCB (FR-4 : 40 x 40 x 1.6mm double side)


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