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RJK4512DPE Datasheet(PDF) 1 Page - Renesas Technology Corp |
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RJK4512DPE Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 4 page REJ03G1540-0100 Rev.1.00 Apr 10, 2007 Page 1 of 3 RJK4512DPE Silicon N Channel MOS FET High Speed Power Switching REJ03G1540-0100 Rev.1.00 Apr 10, 2007 Features • Low on-resistance • Low leakage current • High speed switching Outline 1 2 3 4 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) 1. Gate 2. Drain 3. Source 4. Drain D G S Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 450 V Gate to source voltage VGSS ±30 V Drain current ID 14 A Drain peak current ID (pulse) Note1 42 A Body-drain diode reverse drain current IDR 14 A Body-drain diode reverse drain peak current IDR (pulse) Note1 42 A Avalanche current IAP Note3 3 A Avalanche energy EAR Note3 0.5 mJ Channel dissipation Pch Note2 100 W Channel to case thermal impedance θch-c 1.25 °C/W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25 °C 3. STch = 25 °C, Tch ≤ 150°C |
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