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HAT2299WP Datasheet(PDF) 2 Page - Renesas Technology Corp

Part No. HAT2299WP
Description  Silicon N Channel Power MOS FET Power Switching
Download  7 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HAT2299WP Datasheet(HTML) 2 Page - Renesas Technology Corp

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HAT2299WP
Rev.1.00 Mar 20, 2007 page 2 of 6
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown voltage
V(BR)DSS
150
V
ID = 10 mA, VGS = 0
Zero gate voltage drain current
IDSS
1
µA
VDS = 150 V, VGS = 0
Gate to source leak current
IGSS
±0.1
µA
VGS =
±30 V, VDS = 0
Gate to source cutoff voltage
VGS(off)
3.0
4.0
V
VDS = 10 V, ID = 1 mA
Forward transfer admittance
|yfs|
6
10
S
ID = 7 A, VDS = 10 V
Note4
Static drain to source on state
resistance
RDS(on)
0.097
0.11
ID = 7 A, VGS = 10 V
Note4
Input capacitance
Ciss
710
pF
Output capacitance
Coss
160
pF
Reverse transfer capacitance
Crss
13
pF
VDS = 25 V
VGS = 0
f = 1 MHz
Turn-on delay time
td(on)
26
ns
Rise time
tr
31
ns
Turn-off delay time
td(off)
53
ns
Fall time
tf
7
ns
ID = 7 A
VGS = 10 V
RL = 10.7
Rg = 10
Total gate charge
Qg
15
nC
Gate to source charge
Qgs
4.3
nC
Gate to drain charge
Qgd
5.6
nC
VDD = 120 V
VGS = 10 V
ID = 14 A
Body-drain diode forward voltage
VDF
0.85
1.4
V
IF = 14 A, VGS = 0
Note4
Body-drain diode reverse recovery time
trr
95
ns
IF = 14 A, VGS = 0
diF/dt = 100 A/
µs
Notes: 4. Pulse test


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