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HAT2299WP Datasheet(PDF) 4 Page - Renesas Technology Corp

Part No. HAT2299WP
Description  Silicon N Channel Power MOS FET Power Switching
Download  7 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HAT2299WP Datasheet(HTML) 4 Page - Renesas Technology Corp

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HAT2299WP
Rev.1.00 Mar 20, 2007 page 4 of 6
0.5
0.4
0.3
0.2
0.1
−25
0
25
50
75
100 125
150
0
0.3
0.1
3
30
100
100
30
10
3
1
0.3
0.1
110
Case Temperature Tc (
°C)
Static Drain to Source on State Resistance
vs. Temperature
Drain Current ID (A)
Forward Transfer Admittance vs.
Drain Current
VGS = 10 V
Pulse Test
0
50
100
150
3000
1000
10000
100
300
240
0
16
180
12
120
8
60
4
4
8
12
16
20
0
1000
100
1
10
0.1
0.3
1
3
10
30
100
30
10
3
1
VGS = 0
f = 1 MHz
Coss
Crss
ID = 14 A
VDS
VGS
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nC)
Dynamic Input Characteristics
Drain Current
ID (A)
Switching Characteristics
VDD = 120 V
60 V
30 V
td(on)
td(off)
VGS = 10 V, VDD = 75 V
PW = 5
µs, duty ≤ 1 %
RG = 10 Ω
VDD = 30 V
60 V
120 V
tr
tr
tf
tf
75
°C
VDS = 10 V
Pulse Test
7 A
ID = 28 A
14 A
25
°C
Tc =
−25°C
Ciss
0
0.4
0.8
1.2
1.6
2.0
20
8
Source to Drain Voltage VSD (V)
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
4
12
16
10 V
5 V
VGS = 0, −5 V


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