PESD5V0U1BL datasheet(4/12 Pages) NXP

Part #	PESD5V0U1BL

Description	Ultra low capacitance bidirectional ESD protection diodes

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Manufacturer	NXP [NXP Semiconductors]

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4 / 12 page

PESD5V0U1BA_BB_BL_1

Product data sheet

Rev. 01 — 25 April 2007

4 of 12

NXP Semiconductors

PESD5V0U1BA/BB/BL

Ultra low capacitance bidirectional ESD protection diodes

6.

Characteristics

Table 9.

Characteristics

Tamb =25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per diode

VRWM

reverse standoff voltage

-

5

V

IRM

reverse leakage current

VRWM = 5 V

-

5

100

nA

VBR

breakdown voltage

IR = 5 mA

5.5

7

9.5

V

Cd

diode capacitance

f=1MHz

VR = 0 V

-

2.9

3.5

pF

VR = 5 V

-

1.9

-

pF

rdif

differential resistance

IR = 1 mA

-

100

Ω

f = 1 MHz; Tamb =25 °C

Fig 2.

Diode capacitance as a function of reverse

voltage; typical values

Fig 3.

V-I characteristics for a bidirectional ESD

protection diode

VR (V)

05

4

23

1

006aab036

2.2

2.6

3.0

Cd

(pF)

1.8

006aaa676

−VCL −VBR −VRWM

VCL

VBR

VRWM

−IRM

IRM

−IR

IR

−IPP

IPP

−

+

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PESD5V0U1BL Datasheet(PDF) 4 Page - NXP Semiconductors

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