ELECTRICAL CHARACTERISTICS: T
C = 25° unless otherwise noted
ELECTRICAL CHARACTERISTICS: T
C = 25° unless otherwise noted
STATIC P/N OM6011SA / OM6111SA
STATIC P/N OM6012SA / OM6112SA
Parameter
Min. Typ. Max. Units Test Conditions
Parameter
Min. Typ. Max. Units Test Conditions
BV
DSS
Drain-Source Breakdown
400
V
V
GS = 0,
BV
DSS
Drain-Source Breakdown
500
V
V
GS = 0,
Voltage
I
D = 250 mA
Voltage
I
D = 250 mA
V
GS(th)
Gate-Threshold Voltage
2.0
4.0
V
V
DS = VGS, ID = 250 mAVGS(th)
Gate-Threshold Voltage
2.0
4.0
V
V
DS = VGS, ID = 250 mA
I
GSSF
Gate-Body Leakage Forward
100
nA
V
GS = 20 V
I
GSSF
Gate-Body Leakage Forward
100
nA
V
GS = 20 V
I
GSSR
Gate-Body Leakage Reverse
-100
nA
V
GS = - 20 V
I
GSSR
Gate-Body Leakage Reverse
- 100
nA
V
GS = - 20 V
I
GSS
Gate-Body Leakage (OM6111)
± 500
nA
V
GS = ± 12.8 V
I
GSS
Gate-Body Leakage (OM6112)
± 500
nA
V
GS = ± 12.8 V
I
DSS
Zero Gate Voltage Drain
0.1
0.25
mA
V
DS = Max. Rat., VGS = 0
I
DSS
Zero Gate Voltage Drain
0.1
0.25
mA
V
DS = Max. Rat., VGS = 0
Current
0.2
1.0
mA
V
DS = 0.8 Max. Rat., VGS = 0,
Current
0.2
1.0
mA
V
DS = 0.8 Max. Rat., VGS = 0,
T
C = 125° C
T
C = 125° C
I
D(on)
On-State Drain Current1
10
A
V
DS
2 V
DS(on), VGS = 10 V
I
D(on)
On-State Drain Current1
8.0
A
V
DS
2 V
DS(on), VGS = 10 V
V
DS(on)
Static Drain-Source On-State
2.35 2.75
V
V
GS = 10 V, ID = 5 A
V
DS(on)
Static Drain-Source On-State
3.2
3.4
V
V
GS = 10 V, ID = 4 A
Voltage1
Voltage1
R
DS(on)
Static Drain-Source On-State
0.47 0.55
V
GS = 10 V, ID = 5 A
R
DS(on)
Static Drain-Source On-State
0.8
0.85
V
GS = 10 V, ID = 4 A
Resistance1
Resistance1
R
DS(on)
Static Drain-Source On-State
0.93 1.10
V
GS = 10 V, ID = 5 A,
R
DS(on)
Static Drain-Source On-State
1.50
1.65
V
GS = 10 V, ID = 4 A,
Resistance1
T
C = 125 C
Resistance1
T
C = 125 C
DYNAMIC
DYNAMIC
g
fs
Forward Transductance1
4.0
S(W )
V
DS
2 V
DS(on), ID = 5 A
g
fs
Forward Transductance1
4.0
S(W )
V
DS
2 V
DS(on), ID = 4 A
C
iss
Input Capacitance
1150
pF
V
GS = 0
C
iss
Input Capacitance
1275
pF
V
GS = 0
C
oss
Output Capacitance
165
pF
V
DS = 25 V
C
oss
Output Capacitance
200
pF
V
DS = 25 V
C
rss
Reverse Transfer Capacitance
70
pF
f = 1 MHz
C
rss
Reverse Transfer Capacitance
85
pF
f = 1 MHz
T
d(on)
Turn-On Delay Time
17
ns
V
DD = 175 V, ID @ 5 A
T
d(on)
Turn-On Delay Time
17
ns
V
DD = 200 V, ID = 4 A
t
r
Rise Time
12
ns
R
g = 5 W , VGS = 10 V
t
r
Rise Time
5
ns
R
g = 5 W , VGS = 10 V
T
d(off)
Turn-Off Delay Time
45
ns
T
d(off)
Turn-Off Delay Time
42
ns
t
f
Fall Time
30
ns
t
f
Fall Time
14
ns
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
Continuous Source Current
- 10
A
Modified MOSPOWER
I
S
Continuous Source Current
- 8
A
Modified MOSPOWER
(Body Diode)
symbol showing
(Body Diode)
symbol showing
I
SM
Source Current1
- 40
A
the integral P-N
I
SM
Source Current1
- 32
A
the integral P-N
(Body Diode)
Junction rectifier.
(Body Diode)
Junction rectifier.
V
SD
Diode Forward Voltage1
- 2
V
T
C = 25 C, IS = -10 A, VGS = 0
V
SD
Diode Forward Voltage1
- 2
V
T
C = 25 C, IS = -18 A, VGS = 0
t
rr
Reverse Recovery Time
530
ns
T
J = 150 C,IF = IS,trr
Reverse Recovery Time
700
ns
T
J = 150 C,IF = IS,
dl
F/ds = 100 A/ms
dl
F/ds = 100 A/ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle
2%.
1 Pulse Test: Pulse Width 300msec, Duty Cycle
2%.
(MOSFET) switching times are
essentially independent of
operating temperature.
(MOSFET) switching times are
essentially independent of
operating temperature.
G
D
S
G
D
S