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GSS9930 Datasheet(PDF) 3 Page - GTM CORPORATION |
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GSS9930 Datasheet(HTML) 3 Page - GTM CORPORATION |
3 / 7 page GSS9930 Page: 3/7 ISSUED DATE :2005/10/13 REVISED DATE : P-Channel Electrical Characteristics (Tj = 25 :::: unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS -30 - - V VGS=0, ID=-250uA Breakdown Voltage Temperature Coefficient BVDSS / Tj - -0.037 - V/ : Reference to 25 : , ID=-1mA Gate Threshold Voltage VGS(th) -1.0 - -3.0 V VDS=VGS, ID=-250uA Forward Transconductance gfs - 4.8 - S VDS=-10V, ID=-5A Gate-Source Leakage Current IGSS - - ±100 nA VGS= ±25V Drain-Source Leakage Current(Tj=25 : ) - - -1 uA VDS=-30V, VGS=0 Drain-Source Leakage Current(Tj=70 : ) IDSS - - -25 uA VDS=-24V, VGS=0 - - 55 VGS=-10V, ID=-5A Static Drain-Source On-Resistance2 RDS(ON) - - 100 m VGS=-4.5V, ID=-3A Total Gate Charge2 Qg - 7.3 - Gate-Source Charge Qgs - 2.5 - Gate-Drain (“Miller”) Change Qgd - 3.8 - nC ID=-5A VDS=-15V VGS=-4.5V Turn-on Delay Time2 Td(on) - 10.8 - Rise Time Tr - 7.6 - Turn-off Delay Time Td(off) - 19.6 - Fall Time Tf - 17.5 - ns VDS=-15V ID=-1A VGS=-10V RG=6 RD=15 Input Capacitance Ciss - 486 - Output Capacitance Coss - 185.5 - Reverse Transfer Capacitance Crss - 133.8 - pF VGS=0V VDS=-25V f=1.0MHz Source-Drain Diode Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward On Voltage2 VSD - - -1.2 V IS=-1.7A, VGS=0V, Tj=25 : Reverse Recovery Time Trr - 21 - ns Reverse Recovery Charge Qrr - 15 - nC IS=-1.7A, VGS=0V dI/dt=100A/ s Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 135 : /W when mounted on Min. copper pad. |
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