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GSS4565 Datasheet(PDF) 3 Page - GTM CORPORATION

Part # GSS4565
Description  N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Manufacturer  GTM [GTM CORPORATION]
Direct Link  http://www.gtm.com.tw
Logo GTM - GTM CORPORATION

GSS4565 Datasheet(HTML) 3 Page - GTM CORPORATION

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GSS4565
Page: 3/7
ISSUED DATE :2005/07/27
REVISED DATE :2005/09/29B
P-Channel Electrical Characteristics(Tj = 25
Unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
-40
-
-
V
VGS=0, ID=-250uA
Breakdown Voltage Temperature Coefficient
BVDSS /
Tj
-
-0.03
-
V/ :
Reference to 25 : , ID=-1mA
Gate Threshold Voltage
VGS(th)
-1.0
-
-3.0
V
VDS=VGS, ID=-250uA
Forward Transconductance
gfs
-
10
-
S
VDS=-10V, ID=-6A
Gate-Source Leakage Current
IGSS
-
-
D100
nA
VGS= D20V
Drain-Source Leakage Current(Tj=25 : )
-
-
-1
uA
VDS=-40V, VGS=0
Drain-Source Leakage Current(Tj=70 : )
IDSS
-
-
-25
uA
VDS=-32V, VGS=0
-
-
33
VGS=-10V, ID=-6A
Static Drain-Source On-Resistance2
RDS(ON)
-
-
42
m Ł
VGS=-4.5V, ID=-4A
Total Gate Charge2
Qg
-
20
32
Gate-Source Charge
Qgs
-
4
-
Gate-Drain (“Miller”) Change
Qgd
-
10
-
nC
ID=-6A
VDS=-32V
VGS=-4.5V
Turn-on Delay Time2
Td(on)
-
11
-
Rise Time
Tr
-
7
-
Turn-off Delay Time
Td(off)
-
67
-
Fall Time
Tf
-
43
-
ns
VDS=-20V
ID=-1A
VGS=-10V
RG=3.3 Ł
RD=20 Ł
Input Capacitance
Ciss
-
1440
2300
Output Capacitance
Coss
-
250
-
Reverse Transfer Capacitance
Crss
-
190
-
pF
VGS=0V
VDS=-25V
f=1.0MHz
Source-Drain Diode
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Forward On Voltage2
VSD
-
-
-1.2
V
IS=-1.7A, VGS=0V, Tj=25 :
Reverse Recovery Time2
Trr
-
27
-
ns
Reverse Recovery Charge
Qrr
-
23
-
nC
IS=-6A, VGS=0V
dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 135 : /W when mounted on Min. copper pad.


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