GSS4532

Page: 2/9

ISSUED DATE :2005/07/01

REVISED DATE :2005/09/29B

N-Channel Electrical Characteristics(Tj = 25

Unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

30

-

-

V

Breakdown Voltage Temperature Coefficient

Tj

-

0.037

-

V/ :

Gate Threshold Voltage

1.0

-

3.0

V

Forward Transconductance

-

8

-

S

Gate-Source Leakage Current

-

-

D100

nA

Drain-Source Leakage Current(Tj=25 : )

-

-

1

uA

Drain-Source Leakage Current(Tj=55 : )

-

-

25

uA

-

-

50

Static Drain-Source On-Resistance

-

-

70

m Ł

-

10.2

-

Gate-Source Charge

-

1.2

-

Gate-Drain (“Miller”) Change

-

3.4

-

nC

-

6

-

Rise Time

-

9

-

Turn-off Delay Time

-

15

-

Fall Time

-

5.5

-

ns

Input Capacitance

-

240

-

Output Capacitance

-

145

-

Reverse Transfer Capacitance

-

55

-

pF

f=1.0MHz

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

-

-

1.2

V

-

-

1.7

A

1

-

-

20

A

Notes: 1. Pulse width limited by Max. junction temperature.

2. Pulse width 300us, duty cycle 2%.

3. Surface mounted on FR4 board, t 10sec.

4. Pulse width 10us, duty cycle 1%.