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NT5DS4M32EG Datasheet(PDF) 10 Page - NanoAmp Solutions, Inc. |
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NT5DS4M32EG Datasheet(HTML) 10 Page - NanoAmp Solutions, Inc. |
10 / 46 page Doc # 14-02-045 Rev A ECN 01-1118 10 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. NanoAmp Solutions, Inc. NT5DS4M32EG Advance Information Burst Read Operation Burst Read operation in DDR SDRAM is in the same manner as the current SDRAM such that the burst read command is issued by asserting /CS and /CAS low while holding /RAS and /WE high at the rising edge of the clock after tRCD from the bank activation. The address inputs (A0~A7) determine the starting address for the Burst. The Mode Register sets type of burst (Sequential or interleave) and burst length(2,4,8, Full page). The first output data is available after the /CAS Latency from the READ command, and the consecutive data are presented on the falling and rising edge of Data Strobe adopted by DDR SDRAM until the burst length is completed. Figure 8: Burst Read (Burst Length = 4, /CAS Latency = 3) Burst Write Operation The Burst Write command is issued by having /CS, /CAS and /WE low while holding /RAS high at the rising edge of the clock. The address inputs determine the starting column address. There is no real write latency required for burst write cycle. The first data for burst write cycle must be applied at the first rising edge of the data strobe enabled after tDQSS from the rising edge of the clock that the write command is issued.The remaining data inputs must be supplied on each subsequent falling and rising edge of Data Strobe until the burst length is completed. When the burst has been finished, any additional data supplied to the DQ pins will be ignored. Figure 9: Burst Write (Burst Length = 4) 012 NOP /CK CK Command 345 6 7 8 NOP NOP NOP NOP NOP NOP NOP READ tRPRE tRPST DQS Dout 0 Dout 1 Dout 2 Dout 3 DQ’s /CAS Latency = 3 012 NOP /CK CK Command 345 6 7 8 NOP NOP NOP NOP NOP NOP NOP READ tRPRE tRPST DQS Dout 0 Dout 1 Dout 2 Dout 3 DQ’s /CAS Latency = 3 012 WRITEA /CK CK Command 345 6 7 8 NOP WRITEB NOP NOP NOP NOP NOP NOP tDQSSmax tWPST DQS Din a2 Din a3 Din b0 Din b1 DQ’s Din b2 Din b3 Din a0 Din a1 tWPREH tWPRES 012 WRITEA /CK CK Command 345 6 7 8 NOP WRITEB NOP NOP NOP NOP NOP NOP tDQSSmax tWPST DQS Din a2 Din a3 Din b0 Din b1 DQ’s Din b2 Din b3 Din a0 Din a1 tWPREH tWPRES |
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