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RQK0606KGDQA Datasheet(PDF) 2 Page - Renesas Technology Corp

Part No. RQK0606KGDQA
Description  Silicon N Channel MOS FET Power Switching
Download  8 Pages
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Maker  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
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RQK0606KGDQA Datasheet(HTML) 2 Page - Renesas Technology Corp

   
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RQK0606KGDQA
Rev.1.00 Jan 15, 2007 page 2 of 7
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown voltage
V(BR)DSS
60
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
+12
V
IG = +100
µA, VDS = 0
Gate to source breakdown voltage
V(BR)GSS
–12
V
IG = –100
µA, VDS = 0
Gate to source leak current
IGSS
+10
µA
VGS = +10 V, VDS = 0
Gate to source leak current
IGSS
–10
µA
VGS = –10 V, VDS = 0
Drain to source leak current
IDSS
1
µA
VDS = 60 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
0.4
1.4
V
VDS = 10 V, ID = 1 mA
Drain to source on state resistance
RDS(on)
173
225
m
ID = 0.8 A, VGS = 4.5 V
Note3
Drain to source on state resistance
RDS(on)
207
290
m
ID = 0.8 A, VGS = 2.5 V
Note3
Forward transfer admittance
|yfs|
2.3
4
S
ID = 0.8 A, VDS = 10 V
Note3
Input capacitance
Ciss
200
pF
Output capacitance
Coss
25
pF
Reverse transfer capacitance
Crss
14
pF
VDS = 10 V
VGS = 0
f = 1 MHz
Turn - on delay time
td(on)
11
ns
Rise time
tr
27
ns
Turn - off delay time
td(off)
31
ns
Fall time
tf
4
ns
ID = 0.8 A
VGS = 10 V
RL = 12.5
Rg = 4.7
Total gate charge
Qg
2.2
nC
Gate to Source charge
Qgs
0.4
nC
Gate to drain charge
Qgd
0.7
nC
VDD = 10 V
VGS = 4.5 V
ID = 1.5 A
Body - drain diode forward voltage
VDF
0.8
V
IF = 1.5 A, VGS = 0
Note3
Notes: 3. Pulse test


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