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RKP200KP Datasheet(PDF) 2 Page - Renesas Technology Corp

Part No. RKP200KP
Description  Silicon Epitaxial Planar Pin Diode for Antenna Switching
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Maker  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
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RKP200KP Datasheet(HTML) 2 Page - Renesas Technology Corp

   
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RKP200KP
Rev.3.00 Feb 21, 2007 page 2 of 4
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Reverse voltage
VR
30
V
Forward current
IF
100
mA
Power dissipation
Pd
100
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward voltage
VF
1.0
V
IF = 10 mA
Reverse current
IR
100
nA
VR = 30 V
Capacitance
C
0.35
pF
VR = 1 V, f = 1 MHz
Forward resistance
rf
1.3
Ω
IF = 10 mA, f = 100 MHz
ESD-Capability *
1
100
V
C = 200 pF, R = 0
Ω, Both forward
and reverse direction 1 pulse.
Notes
: 1. Failure criterion ; I
R > 100 nA at VR = 30 V
2. Please do not use the soldering iron due to avoid high stress to the MP6 package.


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