Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.COM

X  

Preview PDF Download HTML

HAF2012 Datasheet(PDF) 3 Page - Renesas Technology Corp

Part No. HAF2012
Description  Silicon N Channel MOS FET Series Power Switching
Download  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HAF2012 Datasheet(HTML) 3 Page - Renesas Technology Corp

  HAF2012 Datasheet HTML 1Page - Renesas Technology Corp HAF2012 Datasheet HTML 2Page - Renesas Technology Corp HAF2012 Datasheet HTML 3Page - Renesas Technology Corp HAF2012 Datasheet HTML 4Page - Renesas Technology Corp HAF2012 Datasheet HTML 5Page - Renesas Technology Corp HAF2012 Datasheet HTML 6Page - Renesas Technology Corp HAF2012 Datasheet HTML 7Page - Renesas Technology Corp HAF2012 Datasheet HTML 8Page - Renesas Technology Corp HAF2012 Datasheet HTML 9Page - Renesas Technology Corp Next Button
Zoom Inzoom in Zoom Outzoom out
 3 / 10 page
background image
HAF2012(L), HAF2012(S)
REJ03G1139-0400 Rev.4.00 Jul 13, 2007
Page 3 of 9
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
ID1
10
A
VGS = 3.5 V, VDS = 2 V
Drain current
ID2
10
mA
VGS = 1.2 V, VDS = 2 V
Drain to source breakdown voltage
V (BR) DSS
60
V
ID = 10 mA, VGS = 0
V (BR) GSS
16
V
IG = 100
µA, VDS = 0
Gate to source breakdown voltage
V (BR) GSS
–2.8
V
IG = –100
µA, VDS = 0
IGSS1
100
µA
VGS = 8 V, VDS = 0
IGSS2
50
µA
VGS = 3.5 V, VDS = 0
IGSS3
1
µA
VGS = 1.2 V, VDS = 0
Gate to source leak current
IGSS4
–100
µA
VGS = –2.4 V, VDS = 0
IGS (op) 1
0.8
mA
VGS = 8 V, VDS = 0
Input current (shut down)
IGS (op) 2
0.35
mA
VGS = 3.5 V, VDS = 0
Zero gate voltage drain current
IDSS
250
µA
VDS = 50 V, VGS = 0
Gate to source cutoff voltage
VGS (off)
1.0
2.25
V
ID = 1 mA, VDS = 10 V
RDS (on)
50
65
m
ID = 10 A, VGS = 4 V
Note 3
Static drain to source on state resistance
RDS (on)
30
43
m
ID = 10 A, VGS = 10 V
Note 3
Forward transfer admittance
|yfs|
6
12
S
ID = 10 A, VDS = 10 V
Note 3
Output capacitance
Coss
630
pF
VDS = 10 V, VGS = 0
f = 1 MHz
Turn-on delay time
td (on)
7.5
µs
Rise time
tr
29
µs
Turn-off delay time
td (off)
34
µs
Fall time
tf
26
µs
ID = 5 A
VGS = 5 V
RL = 6
Body-drain diode forward voltage
VDF
1.0
V
IF = 20 A, VGS = 0
Body-drain diode reverse recovery time
trr
110
ns
IF = 20 A, VGS = 0
diF/dt = 50 A/
µs
tos1
1.8
ms
VGS = 5 V, VDD = 12 V
Over load shut down operation time
Note4
tos2
0.7
ms
VGS = 5 V, VDD = 24 V
Notes: 3. Pulse test
4. Including the junction temperature rise of the over loaded condition.


Html Pages

1  2  3  4  5  6  7  8  9  10 


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn