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HAF2012 Datasheet(PDF) 4 Page - Renesas Technology Corp

Part No. HAF2012
Description  Silicon N Channel MOS FET Series Power Switching
Download  10 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HAF2012 Datasheet(HTML) 4 Page - Renesas Technology Corp

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HAF2012(L), HAF2012(S)
REJ03G1139-0400 Rev.4.00 Jul 13, 2007
Page 4 of 9
Main Characteristics
Case Temperature
Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
Gate to Source Voltage
VGS (V)
Typical Transfer Characteristics
50
0
10
20
30
40
0
2
468
10
50
0
10
20
30
40
012345
80
0
20
40
60
0
50
100
150
200
VDS = 10 V
Pulse Test
10 V
4 V
5 V
6 V
8 V
3.5 V
VGS = 3 V
Pulse Test
Drain to Source Voltage
VDS (V)
Maximum Safe Operation Area
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
2.0
0
0.4
0.8
1.2
1.6
02
4
6
8
10
Pulse Test
ID = 20 A
5 A
10 A
Drain Current
ID (A)
Static Drain to Source on State Resistance
vs. Drain Current
0.1
0.05
0.02
0.01
520
50
1
10
100 200
2
0.5
0.2
VGS = 4 V
10 V
Pulse Test
75°C
Tc = –25°C
25°C
500
100
200
20
50
10
2
5
1
0.5
0.3
0.3 0.5
1
2
5
10
20
50 100
Ta = 25
°C
20
µs
100
µs
1 ms
PW
=
10
ms
DC
Operation
(Tc
=
25
°C)
Operation in this area
is limited by RDS (on)
Thermal shut down
Operation area


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