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HAF2011 Datasheet(PDF) 3 Page - Renesas Technology Corp

Part No. HAF2011
Description  Silicon N Channel MOS FET Series Power Switching
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Maker  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HAF2011 Datasheet(HTML) 3 Page - Renesas Technology Corp

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HAF2011(L), HAF2011(S)
REJ03G1138-0500 Rev.5.00 Aug 21, 2007
Page 3 of 8
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
ID1
15
A
VGS = 3.5 V, VDS = 2 V
Drain current
ID2
10
mA
VGS = 1.2 V, VDS = 2 V
Drain to source breakdown voltage
V (BR) DSS
60
V
ID = 10 mA, VGS = 0
V (BR) GSS
16
V
IG = 300
µA, VDS = 0
Gate to source breakdown voltage
V (BR) GSS
–2.5
V
IG = –100
µA, VDS = 0
IGSS1
100
µA
VGS = 8 V, VDS = 0
IGSS2
50
µA
VGS = 3.5 V, VDS = 0
IGSS3
1
µA
VGS = 1.2 V, VDS = 0
Gate to source leak current
IGSS4
–100
µA
VGS = –2.4 V, VDS = 0
IGS (op) 1
0.8
mA
VGS = 8 V, VDS = 0
Input current (shut down)
IGS (op) 2
0.35
mA
VGS = 3.5 V, VDS = 0
Zero gate voltage drain current
IDSS
10
µA
VDS = 60 V, VGS = 0
Gate to source cutoff voltage
VGS (off)
1.0
2.25
V
ID = 1 mA, VDS = 10 V
RDS (on)
25
33
m
ID = 20 A, VGS = 4 V
Note 3
Static drain to source on state resistance
RDS (on)
15
20
m
ID = 20 A, VGS = 10 V
Note 3
Forward transfer admittance
|yfs|
8
16
S
ID = 20 A, VDS = 10 V
Note 3
Output capacitance
Coss
940
pF
VDS = 10 V, VGS = 0
f = 1 MHz
Turn-on delay time
td (on)
10.7
µs
Rise time
tr
66
µs
Turn-off delay time
td (off)
15.5
µs
Fall time
tf
19
µs
ID = 20 A
VGS = 5 V
RL = 1.5
Body-drain diode forward voltage
VDF
1
V
IF = 40 A, VGS = 0
Body-drain diode reverse recovery time
trr
200
ns
IF = 40 A, VGS = 0
diF/dt = 50 A/
µs
Over load shut down operation time
Note4
tos1
1
ms
VGS = 5 V, VDD = 16 V
Notes: 3. Pulse test
4. Including the junction temperature rise of the over loaded condition.


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