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TEA1062A Datasheet(PDF) 9 Page - NXP Semiconductors |
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TEA1062A Datasheet(HTML) 9 Page - NXP Semiconductors |
9 / 28 page 1997 Sep 03 9 Philips Semiconductors Product specification Low voltage transmission circuits with dialler interface TEA1062; TEA1062A LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Notes 1. Mostly dependent on the maximum required Tamb and on the voltage between LN and SLPE (see Figs 6, 7 and 8). 2. Calculated for the maximum ambient temperature specified (Tamb =75 °C) and a maximum junction temperature of 125 °C. HANDLING This device meets class 2 ESD test requirements [Human Body Model (HBM)], in accordance with “MIL STD 883C - method 3015”. THERMAL CHARACTERISTICS Note 1. Mounted on glass epoxy board 28.5 × 19.1 × 1.5 mm. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VLN positive continuous line voltage − 12 V VLN(R) repetitive line voltage during switch-on or line interruption − 13.2 V VLN(RM) repetitive peak line voltage for a 1 ms pulse per 5 s R9 = 20 Ω; R10 = 13 Ω; see Fig.18 − 28 V Iline line current R9 = 20 Ω; note 1 − 140 mA VI input voltage on all other pins positive input voltage − VCC + 0.7 V negative input voltage −−0.7 V Ptot total power dissipation R9 = 20 Ω; note 2 TEA1062; TEA1062A − 666 mW TEA1062M1; TEA1062AM1 − 617 mW TEA1062T; TEA1062AT − 454 mW Tamb operating ambient temperature −25 +75 °C Tstg storage temperature −40 +125 °C Tj junction temperature − 125 °C SYMBOL PARAMETER VALUE UNIT Rth j-a thermal resistance from junction to ambient in free air TEA1062; TEA1062A 75 K/W TEA1062M1; TEA1062AM1 81 K/W TEA1062T; TEA1062AT (note 1) 110 K/W |
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