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STB50NE10 Datasheet(PDF) 4 Page - STMicroelectronics

Part # STB50NE10
Description  N-channel 100V - 0.021廓 - 50A - D2PAK STripFET??Power MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB50NE10 Datasheet(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STB50NE10
4/13
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage
ID = 250µA, VGS =0
100
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = Max rating
VDS = Max rating,
TC = 125°C
1
10
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20V
±100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250µA
2
3
4
V
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 25A
0.021
0.027
Ω
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Forward
transconductance
VDS=VDS>ID(on)xRDS(on)
max, ID =20A
20
35
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1MHz,
VGS = 0
4350
500
175
6000
pF
pF
pF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 50V, ID = 25A
RG =4.7Ω VGS = 10V
(see Figure 12)
25
100
45
35
ns
ns
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 80V, ID = 50A,
VGS = 10V, RG =4.7Ω
(see Figure 13)
123
24
47
166
nC
nC
nC


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